High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wells

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2717-2719

  Chin, Albert ^a   Lin, B C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; LINEWIDTH; OPTICAL QUALITY; TWO STEP GROWTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030572093     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115575     Document Type: Article

References (17)

1. H. Q. Hou and C. W. Tu, J. Appl. Phys. AIP 75, 4673 (1994).
2. J. P. R. David, R. Grey, G. J. Rees, A. S. Pabla, T. E. Sale, J. Woodhead, J. L. Sanchez-Rojas, M. A. Pste, G. Hill, and P. N. Robson, J. Electron. Mater. INS 23, 975 (1994).
3. H. C. Sun, I. Davis, Y. Lam, and P. K. Bhattachatya, Proceedings of GaAs Related Compounds, 1992 (unpublished), p. 229.
4. H. Q. Hou, N. J. Sauer, and T. Y. Chang, 36th Electronic Materials Conference, Colorado, 1994 (unpublished).
5. J. L. Sanchez-Rojas, A. Sacendon, F. Gonzalez-Sanz, E. Calleja, and E. Munoz, Appl. Phys. Lett. AIP 65, 2042 (1994).
6. T. Hayakawa, K. Takahashi, M. Kondo, T. Suyama, S. Yamamoto, and T. Hijikata, Phys. Rev. Lett. AIP 60, 349 (1988).
7. T. Hayakawa, K. Takahashi, M. Kondo, T. Suyama, S. Yamamoto, and T. Hijikata, Jpn. J. Appl. Phys. INS 26, L302 (1987).
8. A. Chin, H. Y. Lin, and K. Y. Hsieh, Proceedings of the 8th International Conference on Molecular Beam Epitaxy, Osaka, Japan, August 1994 (unpublished).
9. A. Chin, T. M. Cheng, S. P. Peng, Z. Osman, U. Das, and C. Y. Chang, Appl. Phys. Lett. AIP 63, 2381 (1993).
10. A. Chin, K. Y. Hsieh, and H. Y. Lin, Appl. Phys. Lett. AIP 65, 1921 (1994).
11. K. W. Goossen, E. A. Caridi, T. Y. Chang, J. B. Stark, D. A. Stark, D. A. B. Miller, and R. A. Morgan, Appl. Phys. Lett. AIP 56, 715 (1990).
12. R. L. Tober and T. B. Bahder, Appl. Phys. Lett. AIP 63, 2369 (1993).
13. A. Chin, P. Martin, P. Ho, J. Ballingall, T. Yu, and J. Mazurowski, Appl. Phys. Lett. AIP 59, 1899 (1991).
14. A. Chin, P. Martin, J. Ballingall, T. Yu, and J. Mazurowski, 33rd Electronic Materials Conference, Boulder, CO, June 1991 (unpublished).
15. A. Chin, T. Y. Chang, A. Ourmazd, and E. M. Monberg, Appl. Phys. Lett. AIP 58, 968 (1991).
16. A. Chin, P. Martin, J. Ballingall, T. Yu, and J. Mazurowski, Appl. Phys. Lett. AIP 59 2394 (1991).
17. Y. Nomura, Y. Morishita, S. Goto, Y. Katayama, and T. Isu, Appl. Phys. Lett. AIP 64, 1123 (1994).