50-GHz-bandwidth baseband amplifiers using GaAs-based HBT's

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1336-1340

  Suzuki, Yasuyuki ^b,c,d,e   Shimawaki, Hidenori ^b,f,g,h,i   Amamiya, Yasushi ^b,i,j,k   Nagano, Nobuo ^b,e,k,l   Niwa, Takaki ^b,i,j,l,m   Yano, Hitoshi ^b   Honjo, Kazuhiko ^a,b  

^a IEEE

^b NEC CORPORATION   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d Optoelectronics High Frequency D   (Japan)

^e Institute of Electronics   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g UNIVERSITY OF MICHIGAN   (United States)

^h Optoelectronics High Frequency D   (Japan)

ⁱ JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^j UNIVERSITY OF TOKYO   (Japan)

^k Optoelectronics High Frequency D   (Japan)

^l TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^m NEC Microlectron Res Laboratories

more..

Author keywords

Broad band amplifiers; Feedback amplifiers; Heterojunction bipolar transistors; Monolithic integrated circuits

Indexed keywords

EID: 0000558548     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711332     Document Type: Article

References (8)

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2. S. Kimura, Y. Imai, Y. umeda, and T. Enoki, "A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique," in 1994 IEEE GaAs IC Symp. Tech. Dig., pp. 96-99.
3. S. Kimura, Y. Imai, and Y. Miyamoto, "Direct-coupled distibuted baseband amplifier IC's for 40-Gb/s optical communication," IEEE J. Solid-State Circuits, vol. 31, pp. 1374-1379, Oct. 1996.
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6. +/p regrown base contacts," IEEE Trans. Electron Devices, vol. 42, pp. 1735-1744, Oct. 1995.
7. N. Hayama and K. Honjo, "Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer," IEEE Electron Device Lett., vol. 11, pp. 388-390, Sept. 1990.
8. Y. Suzuki, H. Shimawaki, Y. Amamiya, K. Fukuchi, N. Nagano, H. Yano, and K. Honjo, "An HBT preamplifier for 40-Gb/s optical H. Yano, and K. Honjo, "An HBT preamplifier for 40-Gb/s optical transmission systems," in 1996 IEEE GaAs IC Symp. Tech. Dig., pp. 203-206.