Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

Solid State Communications

Volumn 97, Issue 5, 1996, Pages 381-384

  Fan, W J ^a   Li, M F ^a   Chong, T C ^a   Xia, J B ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A. semiconductors; D. electronic band structure

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CRYSTAL LATTICES; ELECTRONIC PROPERTIES; GALLIUM ALLOYS; HETEROJUNCTIONS; NITRIDES; OPTOELECTRONIC DEVICES; SHEAR DEFORMATION; ZINC;

EMPIRICAL PSEUDOPOTENTIAL METHOD; HYDROSTATIC POTENTIAL CONSTANT; SHEAR DEFORMATION POTENTIAL CONSTANT;

SEMICONDUCTOR MATERIALS;

EID: 0030083853     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00700-8     Document Type: Article

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