Properties of ZrO2 films on sapphire prepared by electron cyclotron resonance oxygen-plasma-assisted deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1211-1214

  Moulzolf, S C ^a   Yu, Yan ^a   Frankel, D J ^a   Lad, R J ^a  

^a Laboratory for Surface Science and Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; CUBIC PHASE; ELECTRON BEAM EVAPORATION; EPITAXIAL ORIENTATIONS; MONOCLINIC PHASE; OXYGEN PLASMAS; R-SAPPHIRE; SINGLE PHASE; TEMPERATURE RANGE;

AMORPHOUS FILMS; CYCLOTRONS; ELECTRON BEAMS; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; EPITAXIAL GROWTH; ION SOURCES; OXYGEN; PLASMA DEPOSITION; RESONANCE; SAPPHIRE; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

ZIRCONIUM ALLOYS;

EID: 0000453551     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580595     Document Type: Article

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