Effects of structural defects on hole drift mobility in aryl-substituted polysilanes

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 79, Issue 10, 1999, Pages 1631-1645

  Seki, Shu ^a   Yoshida, Yoichi ^a   Tagawa, Seiichi ^a   Asai, Keisuke ^b   Ishigure, Kenkichi ^b   Furukawa, Kazuaki ^c   Fujikiand, Michiya ^c   Matsumoto, Nobuo ^c,d  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NTT Basic Research Laboratories   (Japan)

^d SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000414484     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642819908218327     Document Type: Article

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