The coalescence of [001] diamond grains heteroepitaxially grown on (001) silicon

Applied Physics Letters

Volumn 69, Issue 25, 1996, Pages 3902-3904

  Jianq, X ^a   Jia, C L ^b  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000385643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117564     Document Type: Article

References (11)

1. X. Jiang and C.-P. Klages, Diam. Relat. Mater. 2, 1112 (1993).
2. B. R. Stoner, S. R. Sahaida, J. P. Bade, P. Southworth, and P. J. Ellis, J. Mater. Res. 8, 1334 (1993).
3. X. Jiang, W. J. Zhang, M. Paul, and C.-P. Klages, Appl. Phys. Lett. 68, 1927 (1996).
4. X. Jiang and C. L. Jia, Appl. Phys. Lett. 67, 1197 (1995).
5. H. Kawarada, T. Suesada, and H. Nagasawa, Appl. Phys. Lett. 66, 583 (1995).
6. K. Kobashi, K. Nishimura, Y. Kawate, and T. Horiuchi, Phys. Rev. B 38, 4067 (1988).
7. X. Jiang and C.-P. Klages, Phys. Status Solid, A 154, 175 (1996).
8. M. Kleman, Dislocation and Properties of Real Materials, Proc. Conf. to celebrate the Fiftieth Anniversary of the Dislocation in Crystal (The Institute of Metals, London, 1985), p. 51.
9. X. Jiang, K. Schiffman, and C.-P. Klages, Phys. Rev. B 50, 8402 (1994).
10. N. Lee and A. Badzian, Appl. Phys. Lett. 67, 2011 (1995).
11. K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Diam. Relat. Mater. (to be published).