Lithographic and chemical contrast of single component top surface imaging (TSI) resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 1009-1016

  Bohland, John F ^a   Chambers, Janet ^b   Das, Siddhartha ^b   Fedynyshyn, Theodore H ^a,c   Holl, Susan M ^b   Hutchinson, John M ^b   Rao, Veena ^b   Sinta, Roger F ^a  

^a SHIPLEY COMPANY   (United States)

^b INTEL CORPORATION   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

193 nm; Lithography; Photoresist; Silylation; Top surface imaging

Indexed keywords

PHOTORESISTORS; REACTIVE ION ETCHING; SURFACE TREATMENT;

193 NM; CHEMICAL CONTRASTS; CO MONOMERS; ORDER OF MAGNITUDES; POLY (4 HYDROXYSTYRENE) (PHS); SILYLATION; SINGLE COMPONENTS; TOP SURFACE IMAGING;

SILANES;

EID: 0000344330     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312375     Document Type: Conference Paper

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