Stability and transport properties of microcrystalline Si1-xGex films

Thin Solid Films

Volumn 337, Issue 1-2, 1999, Pages 152-157

  Edelman, F ^a   Raz, T ^a   Komem, Y ^a   Stolzer M ^b   Werner, P ^c   Zaumseil, P ^d   Osten, H J ^d   Griesche, J ^d   Capitan, M ^e  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d IHP   (Germany)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Crystallization; Electron transport; Hillocks; Silicon germanium films; X ray diffraction

Indexed keywords

EID: 0000334181     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01378-9     Document Type: Article

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