Application of compact microwave ion source to low temperature growth of transition metal nitride thin films for vacuum microelectronics devices

Review of Scientific Instruments

Volumn 71, Issue 2 II, 2000, Pages 1002-1005

  Gotoh, Y ^a   Tsuji, H ^a   Ishikawa, J ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000297122     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1150372     Document Type: Article

References (11)

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3. L. E. Toth, Transition Metal Carbides and Nitrides (Academic, New York, 1979), p.1.
4. See, example the latest proceedings of the International Vacuum Microelectronics Conference appearing in J. Vac. Sci. Technol. B 17, 503 (1999).
5. M. Endo, H. Nakane, and H. Adachi, J. Vac. Sci. Technol. B 14, 2114 (1996).
6. Y. Gotoh, M. Nagao, T. Ura, H. Tsuji, and J. Ishikawa, Nucl. Instrum. Methods Phys. Res. B 148, 925 (1999).
7. J. Ishikawa, Y. Takeiri, and T. Takagi, Rev. Sci. Instrum. 55, 449 (1984).
8. S. A. Barnett, L. Haltman, J.-E. Sundgren, F. Ronin, and S. Rohde, Appl. Phys. Lett. 53, 400 (1988).
9. Y. Gotoh, T. Shiigi, M. Nagao, H. Tsuji, and J. Ishikawa, Proceedings of the Ion Implantation Technology IIT'98 (in press).
10. V. S. Fomenko, Handbook of Electron Emission Property, translated by Nisso Tsushinsha (Nisso Tsusinsha, Wakayama, 1973) (in Japanese).
11. N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita, R. Shimizu, and H. Tawara, Energy Dependence of the Yields of Ion-Induced Sputtering of Monatomic Solids (Institute of Plasma Physics, Nagoya Universily, 1983).