Positron-lifetime study of compensation defects in undoped semi-insulating InP

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 20, 1998, Pages 13648-13653

  Beling, C ^a   Deng, A ^a   Shan, Y ^a   Zhao, Y ^a   Fung, S ^a   Sun, N ^b   Sun, T ^b   Chen, X ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000289093     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.13648     Document Type: Article

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