Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling

Surface Science

Volumn 361-362, Issue , 1996, Pages 55-58

  Meisels, R ^a   Kulac, I ^a   Sundaram, G ^a   Kuchar, F ^a   McCombe, B D ^b   Weimann, G ^c   Schlapp, W ^d  

^a UNIVERSITY OF LEOBEN   (Austria)

^b UNIVERSITY AT BUFFALO   (United States)

^c WALTER SCHOTTKY INSTITUT   (Germany)

^d DEUTSCHE TELEKOM LABORATORIES   (Germany)

Author keywords

Electrical transport measurements; Electron spin resonance; Gallium arsenide; Quantum effects; Semiconductor semiconductor heterojunctions

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; MILLIMETER WAVES; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL TRANSPORT MEASUREMENT; FRACTIONAL FILLING; MAGNETIC FIELD DEPENDENCE; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE;

PARAMAGNETIC RESONANCE;

EID: 0030196917     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00329-9     Document Type: Article

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