MBE growth of fluorides

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 361-382

  Sugiyama, Munehiro ^a   Oshima, Masaharu ^a,b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; ELECTRON DEVICES; EPITAXIAL GROWTH; FLUORINE COMPOUNDS; MISFET DEVICES; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OPTICAL DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

ELECTRON HALL MOBILITY; EPITAXIAL FLUORIDES; EPITAXIAL INSULATORS; EPITAXIAL METALS; IONIC CONDUCTION EFFECTS; SEMICONDUCTOR OPTOELECTRONIC DEVICES; SEMICONDUCTOR SUBSTRATE; SURFACE PLANE ORIENTATION; TWO STEP GROWTH METHOD;

ELECTRIC INSULATING MATERIALS;

EID: 0030195577     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00062-3     Document Type: Review

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