Kinetics of porous silicon growth studied using flicker-noise spectroscopy

Journal of Applied Physics

Volumn 87, Issue 10, 2000, Pages 7558-7566

  Parkhutik, V ^a   Timashev, S ^b  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^b KARPOV INSTITUTE OF PHYSICAL CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000185267     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373022     Document Type: Article

References (16)

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