An isolated silicon single chain end-grafted onto a substrate surface

Applied Physics Letters

Volumn 75, Issue 6, 1999, Pages 781-783

  Furukawa, K ^a   Ebata, K ^a   Matsumoto, N ^b  

^a NTT Basic Research Laboratories   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000162902     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124511     Document Type: Article

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