Negative-resistance effects in light-emitting porous silicon diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1096-1099

  Ueno, Koki ^a   Koshida, Nobuyoshi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Carrier injection; Electroluminescence; Negative resistance; Porous silicon

Indexed keywords

EID: 0000151841     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1096     Document Type: Article

References (6)

1. L. T. Canham: Appl. Phys. Lett. 57 (1990) 1046.
2. N. Koshida and H. Koyama: Appl. Phys. Lett. 60 (1992) 347.
3. N. Koshida, T. Ozaki, X. Sheng and H. Koyama: Jpn. J. Appl. Phys. 34 (1995) L705.
4. K. Ueno, T. Ozaki, H. Koyama and N. Koshida: Mater. Res. Soc. Symp. Proc. 452 (1997) 699.
5. T. Oguro, H. Koyama, T. Ozaki and N. Koshida: J. Appl. Phys. 81 (1997) 1407.
6. T. Ozaki, M. Araki, S. Yoshimura, H. Koyama and N. Koshida: J. Appl. Phys. 76 (1994) 1986.