Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 4, 2000, Pages R2436-R2439

  Fomin, V ^a   Gladilin, V ^a   Klimin, S ^a   Devreese, J ^a   Koenraad, P ^b   Wolter, J ^b  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000122670     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.R2436     Document Type: Article

References (16)

1. B. Hübner, B. Jacobs, Ch, Gréus, R. Zengerle, and A. Forchel, J. Vac. Sci. Technol. B 12, 3658 (1994).
2. P. J. Klar, D. Wolverson, J. J. Davies, W. Heimbrodt, M. Happ, and T. Henning, Phys. Rev. B 57, 7114 (1998).
3. R. Held, T. Vancura, T. Heinzel, K. Ensslin, M. Holland, and W. Wegscheider, Appl. Phys. Lett. 73, 262 (1998);in Proceedings of the 24th International Conference on the Physics of Semiconductors, edited by D. Gershoni (World Scientific, Singapore, 1999), (Tul-D4).
4. V. Jungnickel and F. Henneberger, J. Lumin. 70, 238 (1996).
5. D. J. Norris, Al. L. Efros, M. Rosen, and M. G. Bawendi, Phys. Rev. B 53, 16 347 (1996).
6. G. Scamarcio, V. Spagnolo, G. Ventruti, M. Lugará, and G. C. Righini, Phys. Rev. B 53, R10 489 (1996).
7. T. D. Krauss and F. W. Wise, Phys. Rev. B 55, 9860 (1997).
8. V. M. Fomin, V. N. Gladilin, J. T. Devreese, E. P. Pokatilov, S. N. Balaban, and S. N. Klimin, Phys. Rev. B 57, 2415 (1998).
9. V. M. Fomin, E. P. Pokatilov, J. T. Devreese, S. N. Klimin, V. N. Gladilin, and S. N. Balaban, Solid-State Electron. 42, 1309 (1998).
10. E. Kartheuser, in Polarons in Ionic Crystals and Polar Semiconductors, edited by J. T. Devreese (North-Holland, Amsterdam, 1972), p. 726.
11. D. A. Jaroszynski, R. Prazeres, F. Glotin, J. M. Ortega, D. Oepts, A. F. G. van der Meer, G. M. H. Knippels, and P. W. van Amersfoort, Phys. Rev. Lett. 74, 2224 (1995).
12. S. N. Klimin, E. P. Pokatilov, and V. M. Fomin, Phys. Status Solidi B 190, 441 (1995).
13. V. M. Fomin and E. P. Pokatilov, in Proceedings of the Fourth International Conference on the Formation of Semiconductor Interfaces (World Scientific, Singapore, 1994), p. 704.
14. K. Huang and B. Zhu, Phys. Rev. B 38, 13 377 (1988).
15. E. Molinari, S. Baroni, P. Giannozzi, and S. de Gironcoli, Phys. Rev. B 45, 4280 (1992).
16. P. A. Wolff, Phys. Rev. 171, 436 (1968).