Effect of reducing process temperature for preparing SrBi2Ta2O9 in a metal/ferroelectric/semiconductor structure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 5 B, 1997, Pages

  Nagashima, Kazuhito ^a   Hirai, Tadahiko ^a   Koike, Hiroshi ^a   Fujisaki, Yoshihide ^a   Hase, Takashi ^a   Miyasaka, Yoichi ^a   Tarui, Yasuo ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CERIUM COMPOUNDS; CURVE FITTING; FERROELECTRIC MATERIALS; FILM PREPARATION; HIGH TEMPERATURE EFFECTS; HYSTERESIS; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS; THIN FILMS; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT VOLTAGE CHARACTERISTICS;

DIELECTRIC FILMS;

EID: 0031140449     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l619     Document Type: Article

References (14)