Carrier transport and electron field-emission properties of a nonaligned carbon nanotube thick film mixed with conductive epoxy

Journal of Applied Physics

Volumn 88, Issue 7, 2000, Pages 4181-4185

  Lee, Yun Hi ^a   Kim, Dong Ho ^a,b   Kim, Hoon ^a   Ju, Byeong Kwon ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000075227     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1287113     Document Type: Article

References (29)

1. S. Ijima, Nature (London) 354, 56 (1991).
2. A. G. Rinzer, J. H. Hafner, P. Nokolaer, L. Lon, S. G. Kim, D. Tomane, P. Nordlander, D. T. Golber, and R. E. Smalley, Science 269, 1550 (1995).
3. Y. Saito, K. Hamaguchi, T. Nishino, K. Hata, K. Tohji, A. Kasuja, and Y. Nishima, Jpn. J. Appl. Phys., Part 2 36, L1340 (1997).
4. Y. Saito, K. Hamaguchi, K. Hata, K. Uchida, Y. Tasaka, F. Ikazaki, M. Yumura, A. Kasuya, and Y. Nishima, Nature (London) 389, 554 (1997).
5. P. G. Collins and A. Zettl, Phys. Lett. 69, 1969 (1996).
6. P. G. Collins and A. Zettl, Phys. Rev. B 55, 9391 (1997).
7. Yu. V. Gulyacv, F. Zakharcehnko, Z. Ya. Kosakovskaya, L. A. Chernozalonskii, O. E. Glukhova, and I. G. Torgashiov, J. Vac. Sci. Technol. B 15, 422 (1997).
8. Q. H. Wang, T. D. Corrigan, J. Y. Dai, R. P. Chang, and A. R. Krauss, Appl. Phys. Lett. 70, 3308 (1997).
9. Q. H. Wang, A. A. Setlur, J. M. Lauerhaas, J. Y. dai, E. W. Seelig, and R. P. H. Chang, Appl. Phys. Lett. 72, 2912 (1998).
10. T. W. Ebbesen, H. J. Lezec, H. Hiura, J. W. Bennett, H. F. Ghaemi, and T. Thio, Nature (London) 382, 54 (1996).
11. S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs, and C. Dekker, Nature (London) 386, 474 (1997).
12. D. H. Cobden, M. Bockrath, P. L. McEuen, A. G. Rinzler, and R. E. Smalley, Phys. Rev. Lett. 81, 681 (1998).
13. A. Bezryadin, R. M. Verschueren, S. J. Tans, and C. Dekker, Phys. Rev. Lett. 80, 4036 (1998).
14. S. Frank, P. Poncharel, Z. L. Wang, and W. A. de Heer, Science 20, 1744 (1998).
15. A. Bachtold, M. Henny, C. Terrier, C. Strunk, C. Schönenberger, J.-P. Salvetat, J.-M. Bonnard, and L. Forró, Appl. Phys. Lett. 73, 274 (1998).
16. S. N. Song, X. K. Wang. R. P. H. Chang, and J. B. Ketters, Phys. Rev. Lett. 72, 697 (1994).
17. W. A. Heer, W. S. Bacsa, A. Chatelin, T. Gerfin, T. R. Humphery-Baker, L. Forró, and D. Ugarte, Science 268, 845 (1995).
18. B. Wei, R. Spolenak, P. K. Redlch, M. Ruhle, and E. Arzt, Appl. Phys. Lett. 74/21, 3149 (1999).
19. Y. Yoshida and I. Oguro, J. Appl. Phys. 83, 4985 (1998).
20. Y. Yoshida, J. Phys. Chem. Solids 60, 1 (1999).
21. N. F. Mott, Metal-Insulator Transitions, 2nd ed. (Taylor & Francis, London, 1990).
22. N. F. Mott and E. A. Davis, Electronic Processes in Noncrystalline Materials (Oxford University Press, New York, 1971).
23. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
24. M. Ghosh, A. Barman, S. K. De, and S. Chatterjee, Synth. Met. 97, 23 (1998).
25. Y. O. Yoon, M. Reghu, D. Moses, A. J. Heeger, Y. Cao, T. A. Chen, X. Wu, and R. D. Rieke, Synth. Met. 75, 229 (1995).
26. C. Yu, Phys. Rev. Lett. 82/20, 4074 (1999).
27. Z. Ovadyahu and M. Pollak, Phys. Rev. Lett. 79, 459 (1997).
28. Vaknin, Z. Ovadyahn, and M. Pollak, Phys. Rev. Lett. 82, 669 (1995).
29. G. Martinez-Arizala et al., Phys. Rev. B 57, 12670 (1998).