Switching dependence on fabrication accuracy of tapered ends of a single giant magnetoresistance memory cell in word disturb condition

Journal of Applied Physics

Volumn 85, Issue 8 II B, 1999, Pages 6193-6195

  Redjdal, M ^a   Gross, P W ^a   Kazmi, A ^a   Humphrey, F B ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000046661     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370218     Document Type: Article

References (5)

1. J. Gadbois, J.-G. Zhu, W. Vavra, and A. Hurst, IEEE Trans. Magn. 34, 1066 (1998).
2. Y. Zheng and J.-G. Zhu, IEEE Trans. Magn. 33, 3286 (1997).
3. B. A. Everitt and A. V. Pohm, IEEE Trans. Magn. 33, 3289 (1997).
4. D. D. Tang, P. K. Wang, V. S. Speriosu, S. Le, and K. K. Kung, IEEE Trans. Magn. 31, 3206 (1995).
5. M. Redjdal, Ph.D. thesis, Boston University, Boston, 1997.