Domain wall traps for low-field switching of submicron elements

Journal of Applied Physics

Volumn 87, Issue 9 III, 2000, Pages 7058-7060

  McMichael, R D ^a   Eicke, J ^b   Donahue, M J ^a   Porter, D G ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b GEORGE WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000034084     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372930     Document Type: Article

References (8)

1. B. A. Everitt, A. V. Pohm, R. S. Beech, A. Fink, and J. M. Daughton, IEEE Trans. Magn. 34, 1060 (1995).
2. J. Gadbois and J.-G. Zhu, IEEE Trans. Magn. 31, 3802 (1995).
3. J. Shi, S. Tehrani, T. Zhu, Y. F. Zheng, and J.-G. Zhu, Appl. Phys. Lett. 74, 2525 (1999).
4. J. Gadbois, J.-G. Zhu, W. Vavra, and A. Hurst, IEEE Trans. Magn. 34, 1066 (1998).
5. R. D. McMichael and M. J. Donahue, IEEE Trans. Magn. 33, 4167 (1997).
6. http://math.nist.gov/oommf
7. M. J. Donahue and R. D. McMichael, Physica B 233, 272 (1997).
8. R. D. McMichael, M. J. Donahue, D. G. Porter, and J. Eicke, J. Appl. Phys. 85, 5816 (1999).