Hydrogen-bonded array of on the Si(100) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 3, 2000, Pages 1607-1610

  Cho, Jun Hyung ^a   Kim, Kwang S ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000024157     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.1607     Document Type: Article

References (27)

1. A. Izumi and H. Matsumura, Appl. Phys. Lett. 71, 1371 (1997).
2. F. Bozso and Ph. Avouris, Phys. Rev. Lett. 57, 1185 (1986).
3. R.J. Hamers, Ph. Avouris, and F. Bozso, Phys. Rev. Lett. 59, 2071 (1987).
4. M.J. Dresser, P.A. Taylor, R.M. Wallace, W.J. Choyke, and J.T. Yates, Jr., Surf. Sci. 218, 75 (1989).
5. M. Fujisawa, Y. Taguchi, Y. Kuwahara, M. Onchi, and M. Nishijima, Phys. Rev. B 39, 12 918 (1989).
6. J.L. Bischoff, L. Kubler, D. Bolmont, C.A. Sebenne, J.-P. Lacharme, J.E. Bonnet, and K. Hricovini, Surf. Sci. 293, 35 (1993).
7. N. Franco, J. Avila, M.E. Davila, M.C. Asensio, D.P. Woodruff, O. Schaff, V. Fernandez, K.-M. Schindler, V. Fritzsche, and A.M. Bradshaw, Phys. Rev. Lett. 79, 673 (1997).
8. R.-H. Zhou, P.-L. Cao, and S.-B. Fu, Surf. Sci. 249, 129 (1991).
9. N.W. Moriarty and P.V. Smith, Surf. Sci. 265, 168 (1992).
10. E. Fattal, M.R. Radeke, G. Reynolds, and E.A. Carter, J. Phys. Chem. B 101, 8658 (1997).
11. R. Miotto, G.P. Srivastava, and A.C. Ferraz, Phys. Rev. B 58, 7944 (1998).
12. S.H. Lee and M.H. Kang, Phys. Rev. B 58, 4903 (1998).
13. Theodore L. Einstein, in Physical Structure of Solid Surfaces, edited by W. N. Unertl, Handbook of Surface Science (Elsevier, New York, 1996), Vol. 2.
14. D.R. Jennison, P.A. Schultz, and M.P. Sears, Phys. Rev. Lett. 77, 4828 (1996).
15. W. Widdra, A. Fink, S. Gokhale, P. Trischberger, D. Menzel, U. Birkenheuer, U. Gutdeutsch, and N. Rösch, Phys. Rev. Lett. 80, 4269 (1998).
16. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964).
17. W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965).
18. J.P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
19. Phys. Rev. Lett.J.P. PerdewK. BurkeM. Ernzerhof78, 1396(E) (1997).
20. N. Troullier and J.L. Martins, Phys. Rev. B 43, 1993 (1991).
21. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
22. Phys. Rev. BK. Laasonen, A. Pasquarello, R. Car, C. Lee, and D. Vanderbilt, 47, 10 142 (1993).
23. A higher level calculation (Formula presented), and 16 slab thickness of the Si(100) substrate] hardly changes the bond lengths, bond angles, and relative stabilities (within 0.01 eV). Our calculation scheme was successfully used in a previous study of (Formula presented) on Si(001) [see J.-H. Cho et. al Phys. Rev. B 61, 4503 (2000)].
24. T. Kume, M. Daimon, S. Sasaki, and H. Shimizu, Phys. Rev. B 57, 13 347 (1998).
25. J.S. Loveday and R.J. Nelmes, Phys. Rev. Lett. 83, 4329 (1999).
26. K.S. Kim, B.J. Mhin, U.-S. Choi, and K. Lee, J. Chem. Phys. 97, 6649 (1992).
27. A.B. Gurevich, B.B. Stefanov, M.K. Weldon, Y.J. Chabal, and K. Raghavachari, Phys. Rev. B 58, R13 434 (1998).