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Volumn 16, Issue 46, 2004, Pages 8139-8153
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Metallization of silicon in a shock wave: The metallization threshold and ultrahigh defect densities
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFORMATION;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
HEAT RESISTANCE;
METALLIZING;
SHOCK WAVES;
STRESS ANALYSIS;
DEBYE TEMPERATURE;
SHOCK COMPRESSION;
ULTRAHIGH DEFECT DENSITIES;
SILICON;
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EID: 9944238348
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/16/46/003 Document Type: Article |
Times cited : (29)
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References (53)
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