Emission properties of Ho3+/Tb3+ Co-doped in Ge 30Ga2As8S60 glass

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4827-4832

  Lee Hoon, Tae ^a   Heo, Jong ^a   Choi, Yong Gyu ^b   Park, Bong Je ^c   Chung, Woon Jin ^c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Hankuk Aviation University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ARGON; ENERGY TRANSFER; GLASS; LUMINESCENCE; MOLECULES; PARAMETER ESTIMATION; QUENCHING;

EMISSION PROPERTIES; GLASS DOPING; OPTICAL GAINS; WAVELENGTH REGION;

ELECTRON EMISSION;

EID: 9744256977     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796519     Document Type: Article

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