A new charge-trapping nonvolatile memory based on the re-oxidized nitrous oxide

Microelectronic Engineering

Volumn 77, Issue 1, 2005, Pages 21-26

  Kim, Byungcheul ^a   Kim, Joo Yeon ^b   Seo, Kwang Yell ^c  

^a Gyeongsang National University   (South Korea)

^b Ulsan College   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

Charge trap; Gate oxide reliability; Nitrogen rich layer; Nonvolatile memory; Re oxidized N2O

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC BREAKDOWN; HYDROFLUORIC ACID; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; THERMOANALYSIS;

CHARGE TRAP; GATE OXIDE RELIABILITY; NITROGEN-RICH LAYERS; NONVOLATILE MEMORY; RE-OXIDIZED N2O;

NITROGEN OXIDES;

EID: 9644283196     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.071     Document Type: Article

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