Microstructure and electrical properties of niobium doped Bi 4Ti3O12 layer-structured piezoelectric ceramics

Materials Science and Engineering: B

Volumn 116, Issue 1, 2005, Pages 99-103

  Zhang, Lina ^a   Chu, Ruiqing ^a   Zhao, Suchuan ^a   Li, Guorong ^a   Yin, Qingrui ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Bi 4Ti3O12 ceramics; Domain structure; Electrical conductivity; Nb5+ doped; Piezoelectric properties; Temperature coefficient of dielectric constant

Indexed keywords

BISMUTH COMPOUNDS; DIELECTRIC LOSSES; ELECTRIC CONDUCTIVITY; FERROELECTRIC MATERIALS; HYSTERESIS; MICROSTRUCTURE; NIOBIUM; PIEZOELECTRIC MATERIALS; SINTERING; X RAY DIFFRACTION ANALYSIS;

DOMAIN STRUCTURE; FERROELECTRIC HYSTERESIS LOOPS; PIEZOELECTRIC CERAMICS;

CERAMIC MATERIALS;

EID: 9644259103     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.09.007     Document Type: Article

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