Compositional analysis of silicon nitride films on Si and GaAs by backscattering spectrometry and nuclear resonance reaction analysis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 226, Issue 4, 2004, Pages 631-636

  Kumar, Sanjiv ^a   Raju, V S ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

Backscattering spectrometry; Atomic composition; Depth profile of hydrogen; Proton elastic scattering; Silicon nitride films on Si and GaAs

Indexed keywords

BACKSCATTERING; COMPOSITION; ENERGY ABSORPTION; HYDROGEN; LIGHT PROPAGATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PROTONS; RESONANCE; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

Α-BACKSCATTERING SPECTROMETRY; ATOMIC COMPOSITION; DEPTH PROFILE OF HYDROGEN; NUCLEAR REACTIONS; PROTON ELASTIC SCATTERING; SILICON NITRIDE FILMS ON SI AND GAAS;

SILICON NITRIDE;

EID: 9544252203     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.07.003     Document Type: Article

References (12)

1. S.K. Gandhi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, Wiley Interscience Publication, John Wiley, New York, 1982.
2. E. Rauhala, Nucl. Instr. and Meth. B 12 (1985) 447.
3. J. Weilin, Z. Peiran, D. Aihua, Y. Shiduan, J. Appl. Phys. 70 (1991) 2610.
4. I.C. Vickridge, Nucl. Instr. and Meth. B 34 (1988) 370.
5. W.A. Landford, Nucl. Instr. and Meth. B 66 (1992) 65.
6. J.A. Leavitt, L.C. McIntyre Jr., M.D. Ashbaugh, J.G. Oder, Z. Lin, B. Dezfouly-Arjomandy, Nucl. Instr. and Meth. B 44 (1990) 260.
7. S. Kumar, J.V. Ramana, C. David, V.S. Raju, Nucl. Instr. and Meth. B 142 (1998) 549.
8. E. Kashy, P.D. Miller, J.R. Risser, Phy. Rev. 112 (1958) 547.
9. F. Ye, Z. Zhuying, Z. Guoping, Y. Fujia, Nucl. Instr. and Meth. B 94 (1994) 1.
10. J. Saarilahti, E. Rauhala, Nucl. Instr. and Meth. B 64 (1992) 734.
11. K.K. Brundle, Nucl. Instr. and Meth. B 44 (1990) 260.
12. P.W.K. Chu, J.W. Mayer, M.A. Nicolet, Backscattering Spectrometry, Academic Press, New York, 1983.