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Volumn 37, Issue 3, 2001, Pages 271-273

Preparation and properties of stoichiometric vanadium oxides

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; SILICON DIOXIDE; VANADIUM DERIVATIVE;

EID: 9444276026     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004121515671     Document Type: Article
Times cited : (8)

References (5)
  • 1
    • 0016060794 scopus 로고
    • Influence of Stoichiometry on the Metal-Semiconductor Transition in Vanadium Dioxide
    • Griffith, C.H. and Eastwood, H.K., Influence of Stoichiometry on the Metal-Semiconductor Transition in Vanadium Dioxide, Appl. Phys., 1974, vol. 45, p. 2201.
    • (1974) Appl. Phys. , vol.45 , pp. 2201
    • Griffith, C.H.1    Eastwood, H.K.2
  • 2
    • 27644465003 scopus 로고
    • US Patent 340129
    • US Patent 340129, 1972.
    • (1972)
  • 4
    • 0018510286 scopus 로고
    • Preparation of Vanadium Oxide Films under Equilibrium Conditions and Their Properties, Izv
    • Beresneva, L.A., Vasil'eva, L.L., and Devyatova, S.F., Preparation of Vanadium Oxide Films under Equilibrium Conditions and Their Properties, Izv. Akad. Nauk SSSR, Neorg. Mater., 1979, vol. 15, no. 8, pp. 1406-1410.
    • (1979) Akad. Nauk SSSR, Neorg. Mater. , vol.15 , Issue.8 , pp. 1406-1410
    • Beresneva, L.A.1    Vasil'eva, L.L.2    Devyatova, S.F.3
  • 5
    • 0001828142 scopus 로고
    • Metal-Semiconductor Transition in Vanadium Oxides and Its Potential Applications
    • Chudnovskii, F.A., Metal-Semiconductor Transition in Vanadium Oxides and Its Potential Applications, Zh. Tekh. Fiz., 1975, vol. 45, no. 8, pp. 1561-1583.
    • (1975) Zh. Tekh. Fiz. , vol.45 , Issue.8 , pp. 1561-1583
    • Chudnovskii, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.