Chemical vapor deposition of silicon layers on capillary and pore walls

Theoretical Foundations of Chemical Engineering

Volumn 35, Issue 1, 2001, Pages 76-80

  Prokop'ev, E P ^a   Timoshenkov, S P ^a  

^a NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CHEMICAL PROCEDURES; FLOW; GAS; MATHEMATICAL ANALYSIS; MATHEMATICAL MODEL; PROCESS MODEL; VAPOR;

EID: 9444264350     PISSN: 00405795     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1005276920580     Document Type: Article

References (7)

1. Prokop'ev, E.P., Issledovaniya v oblasti tekhnologii polucheniya sloev kremniya i slozhnykh sistem (Deposition of Silicon and Compound Layers), Available from TsNII Elektronika, 1994, Moscow, no. R-5500.
2. Prokop'ev, E.P., Zotov, V.V., and Timoshenkov, S.P., Model of the Chemical Vapor Deposition of Silicon Layers on Capillary and Pore Walls, Materialovedenie, 1998, no. 3, p. 2.
3. Chemical Engineer's Handbook, Perry, J.H., Ed., New York: McGraw-Hill, 1963, 4th ed. Translated under the title Spravochnik inzhenera-khimika, Leningrad: Khimiya, 1969.
4. Chemical Engineer's Handbook, Perry, J.H., Ed., New York: McGraw-Hill, 1963, 4th ed. Translated under the title Spravochnik inzhenera-khimika, Leningrad: Khimiya, 1969.
5. Yavorskii, B.M. and Detlaf, A.A., Spravochnik po fizike (Handbook of Physics), Moscow: Nauka, 1977.
6. Prokop'ev, E.P., Petrov, S.V., and Belousov, V.S., Pilot-Scale Epitaxy of Silicon: A New Analytical Model, Peterburg. Zh. Elektron., 1996, no. 1, p. 29.
7. Demidovich, V.M., Demidovich, G.B., Kozlov, N.M., and Petrov, A.A., Electrophysical Technique for Measuring the Pore Radius in Porous Silicon, Vestn. Mosk. Univ., Ser. 3: Fiz., Astron., 1998, no. 1, p. 55.