Effect of impurities and structural defects on the transport properties of n-type GaAs crystals

Inorganic Materials

Volumn 38, Issue 8, 2002, Pages 784-789

  Korshunov, F P ^a   Kurilovich, N F ^a   Prokhorenko, T A ^a   Shesholko, V K ^a  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; GERMANIUM DERIVATIVE; TELLURIUM DERIVATIVE; TIN DERIVATIVE;

ARTICLE; CALCULATION; CRYSTAL STRUCTURE; DATA ANALYSIS; DENSITY; INTERMETHOD COMPARISON; IONIZATION; MATHEMATICAL MODEL; TEMPERATURE; THEORETICAL MODEL;

EID: 9444246474     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1019770609713     Document Type: Article

References (11)

1. Seeger, K., Semiconductor Physics, Vienna: Springer, 1973. Translated under the title Fizika poluprovodnikov, Moscow: Mir, 1978.
2. Seeger, K., Semiconductor Physics, Vienna: Springer, 1973. Translated under the title Fizika poluprovodnikov, Moscow: Mir, 1978.
3. Lancefield, D., Adams, A.R., and Fisher, M.A., Reassessment of Ionized Impurity Scattering and Compensation in GaAs and InP Including Correlation Scattering, J. Appl. Phys., 1987, vol. 62, no. 6, pp. 2342-2359.
4. Anderson, D. A. and Apsley, N., The Hall Effect in III-V Semiconductor Assessment, Semicond. Sci. Technol., 1986, no. 1, pp. 187-202.
5. Marianashvili, Sh. and Nanobishvili, D.I., On the Possibility of Neutron Transmutation Doping of Gallium Arsenide, Fiz. Tekh. Poluprovodn. (Leningrad), 1970, vol. 4, no. 10, pp. 1879-1883.
6. Korshunov, F.P., Kurilovich, N.F., Murin, L.I., and Prokhorenko, T.A., On the Determination of Carrier Mobility in Compensated GaAs, Neorg. Mater., 2000, vol. 36, no. 2, pp. 147-152 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 2, pp. 100-104].
7. Korshunov, F.P., Kurilovich, N.F., Murin, L.I., and Prokhorenko, T.A., On the Determination of Carrier Mobility in Compensated GaAs, Neorg. Mater., 2000, vol. 36, no. 2, pp. 147-152 [Inorg. Mater. (Engl. Transl.), vol. 36, no. 2, pp. 100-104].
8. Fistul', V.I. and Shmugurov, V.A., Predominant Positions of Group IV Impurities in Gallium Arsenide, Fiz. Tekh. Poluprovodn. (Leningrad), 1990, vol. 24, no. 6, pp. 1038-1041.
9. Wolfe, C.M., Stillman, G.R., and Dimmok, J.O., Ionized Impurity in n-Type GaAs, J. Appl. Phys., 1970, vol. 41, no. 2, pp. 504-507.
10. Wolfe, C.M. and Stillman, G.R., Electron Mobility in High-Purity GaAs, J. Appl. Phys., 1970, vol. 41, no. 7, pp. 3083-3091.
11. Blakemore, J.S., Semiconducting and Other Major Properties of Gallium Arsenide, J. Appl. Phys., 1982, vol. 53, no. 10, pp. R123-R181.