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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 9 AB, 2004, Pages

Rapid growth of vertically aligned carbon nanotubes

(5) Suekane, Osamu a,b Nagasaka, Takeshi a,c Kiyotaki, Kazuo d Nosaka, Toshikazu a,b Nakayama, Yoshikazu a,e

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE (Japan)

c Taiyo Toyo Sanso Co Ltd (Japan)

d NISSIN ELECTRIC CO LTD (Japan)

e Osaka Prefecture University (Japan)

Author keywords

Carbon nanotube; Growth mechanism; Rapid growth; Thermal chemical vapor deposition; Vertically aligned carbon nanotube

Indexed keywords

ACETYLENE; AMORPHOUS MATERIALS; ANISOTROPY; CARBON; CHEMICAL VAPOR DEPOSITION; FLOW PATTERNS; HELIUM; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH MECHANISM; RAPID GROWTH; THERMAL CHEMICAL VAPOR DEPOSITION; VERTICALLY ALIGNED CARBON NANOTUBE;

CARBON NANOTUBES;

EID: 9144258734 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1214 Document Type: Article

Times cited : (22)

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