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Volumn 28, Issue 2, 2004, Pages 159-163

Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low-pressure Ch4 and C2H 2 atmospheres

(6) D'Anna, E a Fernandez M a Leggieri, G a Luches, A a Zocco, A a Majni, G a

a INFM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; CHEMICAL VAPOR DEPOSITION; ETHANE; EXCIMER LASERS; FILM GROWTH; LASER BEAM EFFECTS; METHANE; PULSED LASER DEPOSITION; REFRACTORY MATERIALS; SILICON WAFERS; THIN FILMS;

CERAMICS AND REFRACTORIES; LASER BEAM IMPACT PHENOMENA; LASER DEPOSITION; PULSED LASER ABLATION DEPOSITION (PLD); REACTIVE PULSED LASER ABLATION DEPOSITION (RPLD);

TITANIUM CARBIDE;

EID: 9144257292 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004174 Document Type: Article

Times cited : (6)

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