Effect of technology on the input transistor selection criteria of a low noise preamplifier

Proceedings of the Mediterranean Electrotechnical Conference - MELECON

Volumn 1, Issue , 2004, Pages 51-54

  Noulis, T ^a   Siskos, S ^a   Sarrabayrouse, G ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; FEEDBACK; MOSFET DEVICES; TRANSISTORS; X RAYS;

CHARGE SENSITIVIE PREAMPLIFIERS (CSA); LOW NOISE PREAMPLIFIERS; PARASITIC CAPACITANCE;

AMPLIFIERS (ELECTRONIC);

EID: 8744314578     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. Z. Y. Chang and W. Sansen, Low-noise Wide-band Amplifiers in Bipolar and CMOS Technologies, Kluwer Publications, 2002.
4. W. Sansen and Z. Y. Chang, "Limits of low noise performance of detector readout front ends in CMOS technology," IEEE Transactions on Circuits and Systems, vol. 37, no. 11, pp. 1375-1382, November 1990.
5. Alfredo Arnaud and Carlos Galup Montoro, "Simple continuous and consistent physics based model for flicker noise in MOS transistors". Proceedings VIII Workshop Iberchip, Guadalajara, Mexico, April 2002.
6. th November 2001, Workshop on semiconductors advances for future electronics SAFE, Amsterdam, 2001.
7. Y. P. Tsividis, Operation and Modeling of the MOS Transistor, McGraw-Hill, 1987.
8. G. Gramegna, P.O'Connor, P. Rehak and S.Hart, "Low-noise CMOS preamplifier-shaper for silicon drift detectors," IEEE Trans. on Nuclear Science, vol. 44, no.3, pp.385-388, June 1997.