Design of the active voltage controller for series IGBTs

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 4, Issue , 2004, Pages 3248-3254

  Palmer, P R ^a   Wang, Y ^a   Abu Khaizaran, M ^b   Finney, S ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b BIRZEIT UNIVERSITY   (Palestine)

^c HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FEEDBACK LOOP; PARAMETER VALUES; VOLTAGE CONTROLLERS; VOLTAGE TRANSFER FUCTION;

BANDWIDTH; CONTROL SYSTEM ANALYSIS; CONTROL THEORY; ELECTRIC CURRENTS; FEEDBACK; INSULATED GATE BIPOLAR TRANSISTORS; OPTIMIZATION; PERFORMANCE;

VOLTAGE CONTROL;

EID: 8744312712     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2004.1355356     Document Type: Conference Paper

References (10)

1. A.N. Githiari, R.J. Leedham, and P.R. Palmer. High Performance Gate Drives for Utilizing the IGBT in the Active Region. PESC'96, 2:1754- 759, Baveno, Italy, June 1996.
2. A.N. Githiari. The Design of Semiconductor Switches for High Voltage Applications. PhD thesis, University of Cambridge, Cambridge, UK, August 1996.
3. P.R. Palmer, A.N. Githiari, and R.J. Leedham. Some Scaling Issues in the Active Voltage Control of IGBT Modules for High Power Applications. PESC'97, 2:854-860, St. Louis, Missouri, June 1997.
4. P.R. Palmer and A.N. Githiari. The Series Connection of IGBTs with Active Voltage Sharing. IEEE Transactions on Power Electronics, 12(4):637-644, July 1997.
5. EL2030C Datasheet, 120MHz Current Feedback Amplifier. Elantec, Inc., USA.
6. P.R. Palmer, A.N. Githiari, and R.J. Leedham. A Comparison of IGBT Technologies for Use in the Series Connection. PEVD'96, (429):236-241, Nottingham, UK, September 1996.
7. M.S. Abu-Khaizaran. The Design of a High Power IGBT Based Current Source Inverter Drive. PhD thesis, University of Cambridge, Cambridge, UK, January 2003.
8. P.R. Palmer, J.C. Joyce, P.Y. Eng, J. Hudgins, E. Santi, and R. Dougal. Circuit Simulator Models for the Diode and IGBT with Full Temperature Dependent Features. PESC'01, 4:2171-2177, Vancouver, Canada, June 2001.
9. A.R. Hefner. An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transisitor (IGBT). IEEE Transactions on Power Electronics, 5(4):459-468, October 1990.
10. ORCAD PSPICE A/D User's Guide., http://www.orcad.com, ORCAD, Inc., Beaverton, USA, November 1998.