High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

Zeitschrift fur Kristallographie

Volumn 219, Issue 4, 2004, Pages 187-190

  Deiter, Steffi ^a   Witek, Helvi ^a   Oleynik, Nikolay ^a   Bläsing, Jürgen ^a   Dadgar, Armin ^a   Krost, Alois ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Metalorganic vapour phase epitaxy; X ray diffraction; Zinc oxide

Indexed keywords

GALLIUM; ZINC OXIDE;

ANALYTIC METHOD; CONFERENCE PAPER; ELECTRONICS; MATERIALS; SEMICONDUCTOR; TEMPERATURE; THICKNESS; VAPOR; X RAY DIFFRACTION;

EID: 8744269278     PISSN: 00442968     EISSN: None     Source Type: Journal    
DOI: 10.1524/zkri.219.4.187.30445     Document Type: Conference Paper

References (8)

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5. Krost, A.; Bauer, G.; Woitok, J.: High Resolution X-Ray Diffraction. Springer Verlag.
6. Höpler, R.: Unpublished results.
7. PDF 2- ICDD database 36-1451; International Center of diffraction data.
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