High performance a-Si:H thin film transistors based on aluminum gate metallization

Microelectronics Reliability

Volumn 40, Issue 6, 2000, Pages 947-953

  Nathan, A ^a   Murthy, R V R ^a   Park, B ^a   Chamberlain, S G ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b DALSA Corporation   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; GATES (TRANSISTOR); HYDROGENATION; LEAKAGE CURRENTS; METALLIZING; PRESSURE EFFECTS; SPUTTER DEPOSITION; SURFACE ROUGHNESS; THERMAL EFFECTS;

HILLOCK FORMATION;

THIN FILM TRANSISTORS;

EID: 8744261855     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00012-3     Document Type: Article

References (9)

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