Structural analysis of (211) 3C-SiC on (211) Si substrates grown by chemical vapor deposition

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 285-288

  Nishiguchi, T ^a   Mukai, Y ^a   Nakamura, M ^a   Nishio, K ^a   Isshiki, T ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

(211); 3C SiC; CVD; Orientation; Si substrates; Stacking faults; TEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; SINGLE CRYSTALS; STACKING FAULTS; STRUCTURAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

(211); 3C-SIC; ORIENTATION; SI SUBSTRATES;

SILICON CARBIDE;

EID: 8744255501     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.285     Document Type: Conference Paper

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