Increased terahertz emission from thermally treated GaSb

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3092-3094

  Winnerl, S ^a   Sinning, S ^a   Dekorsy, T ^a   Helm, M ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANTIMONY; BACKSCATTERING; COMPUTATIONAL GEOMETRY; ELECTRIC FIELDS; ELECTRON DIFFRACTION; HEAT TREATMENT; LASER PULSES; OPTICAL BEAM SPLITTERS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY;

ANNEALING TEMPERATURE; PROBE-BEAM RADIATION; SURFACE STOICHIOMETRY; TERAHERTZ(THZ) RADIATION PULSES;

GALLIUM COMPOUNDS;

EID: 8644290146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1805197     Document Type: Article

References (22)

1. X.-C. Zhang, B. B. Hu, J. T. Darrow, and D. H. Auston, Appl. Phys. Lett. 56, 1011 (1990).
2. X.-C. Zhang and D. H. Auston, J. Appl. Phys. 71, 326 (1992).
3. A. Y. Polyakov, A. G. Milnes, N. B. Smirnov, L. V. Druzhinina, and I. V. Tunitskaya, Solid-State Electron. 36, 1371 (1993).
4. N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, J. Appl. Phys. 84, 654 (1998).
5. R. McLaughlin, A. Corchia, M. B. Johnston, Q. Chen, C. M. Ciesla, D. D. Arnone, G. A. C. Jones, E. H. Linfield, A. G. Davis, and M. Pepper, Appl. Phys. Lett. 76, 2038 (2000).
6. M. Migita and M. Hangyo, Appl. Phys. Lett. 79, 3438 (2001).
7. M. B. Johnston, D. M. Whittaker, D. Dowd, A. G. Davis, E. H. Linfield, and D. A. Richie, Opt. Lett. 27, 1935 (2002).
8. M. Zedler, C. Janke, P. Haring Bolivar, H. Kurz, and H. Künzel, Appl. Phys. Lett. 83, 4196 (2003).
9. T. Bauer, J. S. Kolb, T. Löffler, E. Mohler, H. G. Roskos, and U. C. Pernisz, J. Appl. Phys. 92, 2210 (2002).
10. Q. Wu, M. Litz, and X.-C- Zhang, Appl. Phys. Lett. 68, 2924 (1996).
11. A. Leitenstorfer, S. Hunsehe, J. Shah, M. C. NUSS, and W. H. Knox, Appl. Phys. Lett. 74, 1516 (1999).
12. P. C. M. Planken, H.-K. Nienhuys, H. J. Bakker, and W. T. Wenckebach, J. Opt. Soc. Am. B 18, 313 (2001).
13. D. E. Aspnes and A. A. Studna, Phys. Rev. B 27, 985 (1983).
14. J. T. Darrow, X.-C. Zhang, and D. H. Auston, Appl. Phys. Lett. 58, 25 (1991).
15. P. K. Benicewicz, J. P. Roberts, and A. J. Taylor, J. Opt. Soc. Am. B 11, 2533 (1994).
16. T.-A. Liu, M. Tani, and C.-L. Pan, J. Appl. Phys. 93, 2996 (2003).
17. M. Nouaoura, F. W. O. Da Suva, N. Bertura, M. Rouanet, A. Taharaouri, W. Oueini, J. Bonnet, and L. Lassabateri, J. Cryst. Growth 172, 37 (1997).
18. S. G. Kim, H. Asahi, M. Seta, J. Takizawa, S. Emura, R. K. Soni, S. Gonda, and T. Tanoue, J. Appl. Phys. 74, 579 (1993).
19. C. E. M. Campos and P. S. Pizani, Appl. Surf. Sci. 200, 111 (2002).
20. M. K. Farr, J. G. Traylor, and S. K. Sinha, Phys. Rev. B 11, 1587 (1975).
21. F. Schäffler and G. Abstreiter, Phys. Rev. B 34, 4017 (1986).
22. J. Wagner, A.-L. Alvaez, J. Schmitz, J. D. Ralston, and P. Koidl, Appl. Phys. Lett. 63, 349 (1993).