Impact ionization coefficients of 4H-SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 673-676

  Hatakeyama, T ^a   Watanabe, T ^a   Kojima, K ^b   Sano, N ^c   Shiraishi, K ^c   Kushibe, M ^a   Imai, S ^a   Shinohe, T ^a   Suzuki, T ^b   Tanaka, T ^b   Arai, K ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

4M SiC; Anisotropy; Breakdown Voltage; Device Simulator; Impact Ionization

Indexed keywords

ANISOTROPY; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; IMPACT IONIZATION; SIMULATORS;

4H-SIC; DEVICE SIMULATION; DEVICE SIMULATORS; DOPING DENSITY;

SILICON CARBIDE;

EID: 8644278897     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.673     Document Type: Conference Paper

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