A high voltage (1570V) 4H-SiC bipolar darlington with current gain β>640 and tested in a half-bridge inverter up to 20A at V Bus=900V

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1169-1172

  Zhao, J H ^a   Zhang, J ^a   Alexandrov, P ^b   Burke, T ^c  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

^c US Army Tank Automotive Command   (United States)

Author keywords

Bipolar junction transistors (BJTs); Darlington; Power transistors; Silicon carbide

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC INVERTERS; ELECTRIC POTENTIAL; GAIN MEASUREMENT; PLASMA ETCHING; SILICON CARBIDE; SILICON WAFERS; TRANSISTORS;

BIPOLAR JUNCTION TRANSISTORS (BJT); COUPLED PLASMA ETCHING; CURRENT GAIN; POWER TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 8644273302     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (8)

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