An analytical model of P+InAsSbP/n0-InAs/ n + -InAs single heterojunction photodetector for 2.4-3.5 μm region

Optical and Quantum Electronics

Volumn 36, Issue 10, 2004, Pages 935-947

  Lal, R K ^a   Chakrabarti, P ^a  

^a BANARAS HINDU UNIVERSITY   (India)

Author keywords

Auger recombination; Detectivity; MIR photodetector; Resistance area product; Responsivity; Trap assisted tunneling

Indexed keywords

CHEMICAL SENSORS; CRYOGENICS; HETEROJUNCTIONS; INFRARED RADIATION; MOLECULAR SPECTROSCOPY; PHOTODETECTORS;

AUGER RECOMBINATION; DETECTIVITY; MIR PHOTODETECTOR; RESISTANCE-AREA PRODUCT; RESPONSIVITY; TRAP-ASSISTED TUNNELING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 8644232562     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11082-004-3112-6     Document Type: Article

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