ITRS: The International Technology Roadmap for Semiconductors

Frontiers Collection

Volumn Part F964, Issue , 2011, Pages 161-174

  Hoefflinger, Bernd ^a  

^a NONE   (Germany)

Author keywords

Equivalent Oxide Thickness; Magic Line; Maximum Operating Voltage; Semiconductor Industry; Transistor Channel

Indexed keywords

EID: 85165933914     PISSN: 16123018     EISSN: 21976619     Source Type: Book Series    
DOI: 10.1007/978-3-642-23096-7_7     Document Type: Chapter

References (7)

1. Moore, G.: Cramming more components onto integrated circuits. Electron. Mag 38(8), 19 Apr 1965
2. Moore, G.: Progress in digital integrated electronics. IEEE IEDM (International Electron Devices Meeting), Technical Digest, pp. 11–13 (1975)
3. Dennard, R.H., Gaensslen, F.H., Yu, H.N., Rideout, V.L., Bassous, E., LeBlanc, A.R.: Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J Solid-St Circ 9, 256 (1974)
4. www.itrs.net/reports.html. Semiconductor Industry Association. The International Technology Roadmap for Semiconductors, 2009 Edition. International SEMATECH: Austin, TX 2009
5. Appenzeller, J., Joselevich, E., Hoenlein, F.: Carbon nanotubes for data processing. In: Waser, R. (ed.) Nanoelectronics and Information Technology, 2nd edn. Wiley-VCH, Weinheim (2005)
6. Wolf, E.L: Chap. 5, Some newer building blocks for nanoelectronics. In: Quantum Nanoelectronics, Wiley-VCH, Weinhiem (2009)
7. Hoenlein, W., Kreupl, F., Duesberg, G.S., Grahem, A.P., Liebau, M., Seidel, R., Unger, E.: Carbon nanotube applications in microelectronics. In: Siffert, P., Krimmel, E.F. (eds.) Silicon: Evolution and Future of a Technology, pp. 477–488. Springer, Berlin/Heidelberg (2004)