Novolak design for high resolution positive photoresists(III) a selection principle of phenolic compounds for novolak resins

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1262, Issue , 1990, Pages 476-482

  Hanabata, M ^a   Furuta, A ^a  

^a SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; PHENOLIC RESINS; PHOTORESISTS; RESINS;

BUTYLPHENOL; DISSOLUTION RATES; HIGH RESOLUTION; IMAGE FORMATION PROCESS; NOVOLAC RESIN; NOVOLAK RESIN; PHENOLIC COMPOUNDS; SELECTION PRINCIPLES;

PHENOLS;

EID: 85075337989     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.20102     Document Type: Conference Paper

References (4)

1. M. Hanabata, A. Furuta and Y. Uemura "High Resolution Positive Photoresists" SPIE Proceedings, 1986, Vol. 631, P.76.
2. M. Hanabata, A. Furuta and Y. Uemura "Novolak Design for High Resolution Positive Photoresists" SPIE Proceedings, 1987 Vol. 771, p. 85.
3. M. Hanabata, Y. Uetani and A. Furuta "Novolak Design for High Resolution Positive Photoresists (II) " SPIE Proceedings, 1988 Vol. 920, P.349.
4. Y. Uetani, M. Hanabata and A. Furuta "Observation of Internal Structure of a Positive Photoresist Using Cross-sectional Exposure Method" J. Vac. Sci. Technol., B7, 569, (1989).