메뉴 건너뛰기




Volumn 86, Issue , 2006, Pages 113-156

Shallow Defects in the Wide Gap Chalcopyrite CuGaSe2

Author keywords

Deep Acceptor; Deep Defect; Excitation Intensity; Hall Measurement; Native Defect

Indexed keywords


EID: 85072859657     PISSN: 0933033X     EISSN: 21962812     Source Type: Book Series    
DOI: 10.1007/3-540-31293-5_7     Document Type: Chapter
Times cited : (26)

References (139)
  • 3
    • 84985757188 scopus 로고
    • VI 2 chalcopyrite semiconductors
    • VI 2 chalcopyrite semiconductors. Cryst. Res. Technol. 18, 901–906 (1983)
    • (1983) Cryst. Res. Technol. , vol.18 , pp. 901-906
    • Neumann, H.1
  • 4
    • 0031366893 scopus 로고    scopus 로고
    • In: Basore, P. (ed.) 26th IEEE PV Specialist Conference, pp., IEEE, New York
    • 2. In: Basore, P. (ed.) 26th IEEE PV Specialist Conference, pp. 313–318. IEEE, New York (2000)
    • (2000) 2 , pp. 313-318
    • Zunger, A.1    Zhang, S.B.2    Wei, S.-H.3
  • 5
    • 0001076239 scopus 로고    scopus 로고
    • 2 on its electronic, structural and defect properties
    • 2 on its electronic, structural and defect properties. Appl. Phys. Lett. 72, 3199–3201 (1998)
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 3199-3201
    • Wei, S.-H.1    Zhang, S.B.2    Zunger, A.3
  • 6
    • 0036467917 scopus 로고    scopus 로고
    • Wide gap chalcopyrites: Material properties and solar cells
    • Siebentritt, S.: Wide gap chalcopyrites: material properties and solar cells. Thin Solid Films 403–404, 1–8 (2002)
    • (2002) Thin Solid Films , vol.403-404 , pp. 1-8
    • Siebentritt, S.1
  • 12
    • 84984094075 scopus 로고
    • Donor–acceptor pairs in semiconductors
    • Williams, F.: Donor–acceptor pairs in semiconductors. Phys. stat. sol. 25, 493–512 (1968)
    • (1968) Phys. Stat. Sol. , vol.25 , pp. 493-512
    • Williams, F.1
  • 13
    • 77957062535 scopus 로고
    • Photoluminescence: theory
    • Willardson, R.K., Beer, A.C. (eds.), Academic Press, New York
    • Bebb, H.B., Williams, E.W.: Photoluminescence: theory. In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals, vol. 8: Transport and Optical Phenomena, pp. 181–320. Academic Press, New York (1972)
    • (1972) Semiconductors and Semimetals , pp. 181-320
    • Bebb, H.B.1    Williams, E.W.2
  • 14
    • 2442496165 scopus 로고
    • Inter-impurity recombinations in semiconductors
    • McCaldin, J.O., Somorjai, G. (eds.), pp., Pergamon Press, Oxford
    • Dean, P.J.: Inter-impurity recombinations in semiconductors. In: McCaldin, J.O., Somorjai, G. (eds.): Progress in Solid State Chemistry, vol. 8, pp. 1–126. Pergamon Press, Oxford (1973)
    • (1973) Progress in Solid State Chemistry, Vol. 8 , pp. 1-126
    • Dean, P.J.1
  • 15
    • 0001007641 scopus 로고
    • Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
    • Schmidt, T., Lischka, K., Zulehner, W.: Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. B 45, 8989– 8994 (1992)
    • (1992) Phys. Rev. B , vol.45 , pp. 8989-8994
    • Schmidt, T.1    Lischka, K.2    Zulehner, W.3
  • 16
    • 0001512375 scopus 로고
    • Experimental proof of the existence of a new complex in silicon
    • Haynes, J.R.: Experimental proof of the existence of a new complex in silicon. Phys. Rev. Lett. 4, 361–363 (1960)
    • (1960) Phys. Rev. Lett. , vol.4 , pp. 361-363
    • Haynes, J.R.1
  • 17
    • 0001254525 scopus 로고
    • Theory of excitons bound to ionized impurities in semiconductors
    • Sharma, R.R., Rodriguez, S.: Theory of excitons bound to ionized impurities in semiconductors. Phys. Rev. 153, 823–827 (1967)
    • (1967) Phys. Rev. , vol.153 , pp. 823-827
    • Sharma, R.R.1    Rodriguez, S.2
  • 18
    • 0000174862 scopus 로고
    • Theory of excitons bound to neutral impurities in polar semiconductors
    • Atzmüller, H., Fröschl, F., Schröder, U.: Theory of excitons bound to neutral impurities in polar semiconductors. Phys. Rev. B 19, 3118–3129 (1979)
    • (1979) Phys. Rev. B , vol.19 , pp. 3118-3129
    • Atzmüller, H.1    Fröschl, F.2    Schröder, U.3
  • 19
    • 0002504193 scopus 로고
    • Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
    • Eagles, D.M.: Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band. J. Phys. Chem. Solids 16, 76–83 (1960)
    • (1960) J. Phys. Chem. Solids , vol.16 , pp. 76-83
    • Eagles, D.M.1
  • 20
    • 0345786214 scopus 로고
    • Excitation dependence of photoluminescence in n-and p-type compensated GaAs
    • Kelly, P.L., Lax, B., Tannenwald, P.E. (eds.), pp., McGraw Hill, New York
    • Nathan, M.I., Morgan, T.N.: Excitation dependence of photoluminescence in n-and p-type compensated GaAs. In: Kelly, P.L., Lax, B., Tannenwald, P.E. (eds.) Physic of Quantum Electronics, pp. 478–486. McGraw Hill, New York (1966)
    • (1966) Physic of Quantum Electronics , pp. 478-486
    • Nathan, M.I.1    Morgan, T.N.2
  • 21
    • 0000603267 scopus 로고    scopus 로고
    • Maeda, K.: Temperature dependence of pair band luminescence in GaP. J. Phys. Chem. Solids 26, 595–605 (1965)
    • Maeda, K.1
  • 22
    • 36149011931 scopus 로고    scopus 로고
    • Thomas, D.G., Hopfield, J.J., Augustyniak, W.M.: Kinetics of the radiative recombination of randomly distributed donors and acceptors. Phys. Rev. A 140. 202–220 (1965)
    • Thomas, D.G.1    Hopfield, J.J.2    Augustyniak, W.M.3
  • 23
    • 0032000198 scopus 로고    scopus 로고
    • Shibata, H.: Negative thermal quenching curves in photoluminescence of solids. Jpn. J. Appl. Phys. 37, 550–553 (1997)
    • Shibata, H.1
  • 25
    • 84927475999 scopus 로고
    • Edge luminescence of direct-gap semiconductors
    • Levanyuk, A.P., Osipov, V.V.: Edge luminescence of direct-gap semiconductors. Sov. Phys. Usp. 24, 187–215 (1981)
    • (1981) Sov. Phys. Usp. , vol.24 , pp. 187-215
    • Levanyuk, A.P.1    Osipov, V.V.2
  • 26
    • 0001122983 scopus 로고    scopus 로고
    • Shifting photoluminescence band in high-resistivity Li-compensated GaAs
    • Gislason, H.P., Yang, B.H., Linnarsson, M.K.: Shifting photoluminescence band in high-resistivity Li-compensated GaAs. Phys. Rev. B 47, 9418–9424 (1993)
    • Phys. Rev. B , vol.47 , pp. 9418-9424
    • Gislason, H.P.1    Yang, B.H.2    Linnarsson, M.K.3
  • 27
    • 0030562279 scopus 로고    scopus 로고
    • Bäume, P., Gutowski, J., Kurtz, E., Hommel, D., Landwehr, G.: Intensity-dependent energy and lineshape variation of donor–acceptor-pair bands in highly compensated ZnSe. N. J. Cryst. Growth 159, 252–256
    • Bäume, P.1    Gutowski, J.2    Kurtz, E.3    Hommel, D.4    Landwehr, G.5
  • 29
    • 0003624373 scopus 로고    scopus 로고
    • Springer, Berlin Heidelberg New York
    • Seeger, K.: Semiconductor Physics. Springer, Berlin Heidelberg New York (2002)
    • (2002) Semiconductor Physics
    • Seeger, K.1
  • 31
    • 77957045562 scopus 로고    scopus 로고
    • Wiley, J.D.: Mobility of holes in III–V compounds. In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals—Transport Phenomena, vol. 10, pp. 91–174. Academic Press, New York (1975)
    • Wiley, J.D.1
  • 32
    • 36149002185 scopus 로고    scopus 로고
    • Pearson, G.L., Bardeen, J.: Electrical properties of pure silicon and alloys containing boron and phosphorus. Phys. Rev. 75, 865–883 (1949)
    • Pearson, G.L.1    Bardeen, J.2
  • 33
    • 0016434782 scopus 로고    scopus 로고
    • Lee, T.F., McGill, T.C.: Variation of impurity-to-band activation energies with impurity density. J. Appl. Phys. 46, 373–380 (1975)
    • Lee, T.F.1    McGill, T.C.2
  • 34
    • 0012931910 scopus 로고    scopus 로고
    • Neumark, G.F.: Concentration and temperature dependence of impurity-to-band activation energies. Phys. Rev. B 5, 408–417 (1972)
    • Neumark, G.F.1
  • 35
    • 0023311755 scopus 로고    scopus 로고
    • Podör, B.: On the concentration dependence of the thermal ionisation energy of impurities in InP. Semicond. Sci. Technol. 2, 177–178 (1987)
    • Podör, B.1
  • 36
    • 77956737431 scopus 로고
    • pp., Springer, Berlin Heidelberg New York
    • Podör, B.: On the concentration dependence of the thermal activation energy of impurities in semiconductors. In: Ferenczi, G., Beleznay, F. (eds.) New Developments in Semiconductor Physics, pp. 55–60. Springer, Berlin Heidelberg New York (1988)
    • (1988) New Developments in Semiconductor Physics , pp. 55-60
    • Podör, B.1
  • 39
    • 0015565949 scopus 로고
    • Sign of the Hall coefficient in hopping-type charge-transport
    • Holstein, T.: Sign of the Hall coefficient in hopping-type charge-transport. Philosophical Magazine 27 (1), 225–233 (1973)
    • (1973) Philosophical Magazine , vol.27 , Issue.1 , pp. 225-233
    • Holstein, T.1
  • 40
    • 84984136398 scopus 로고
    • On the Hall effect in hopping transport
    • Klinger, M.I.: On the Hall effect in hopping transport. Phys. stat. sol. 31, 545–555 (1969)
    • (1969) Phys. Stat. Sol. , vol.31 , pp. 545-555
    • Klinger, M.I.1
  • 42
    • 85072859459 scopus 로고    scopus 로고
    • Mott, N.F.: Metal–Insulator Transitions. Taylor & Francis, London (1974)
    • Mott, N.F.1
  • 48
    • 0016916882 scopus 로고    scopus 로고
    • 2. J. Appl. Phys. 47, 677–684 (1976)
    • Yu, P.W.1
  • 51
    • 0021629104 scopus 로고    scopus 로고
    • 2 compounds. J. Phys. Chem. Solids 45, 1091–1097 (1984)
    • Massé, G.1
  • 54
    • 0000166573 scopus 로고
    • Optical properties of copper indium diselenide near the fundamental absorption edge. Phys
    • Rincón, C., Bellabarba, C.: Optical properties of copper indium diselenide near the fundamental absorption edge. Phys. Rev. B 33, 7160–7163 (1986)
    • (1986) Rev. B , vol.33 , pp. 7160-7163
    • Rincón, C.1    Bellabarba, C.2
  • 55
    • 0013293735 scopus 로고
    • 2 compounds
    • 2 compounds. J. Appl. Phys. 68, 2206–2210 (1990)
    • (1990) J. Appl. Phys. , vol.68 , pp. 2206-2210
    • Massé, G.1
  • 69
  • 73
  • 74
  • 79
    • 33749589366 scopus 로고
    • A generalized approach to the defect chemistry of ternary compounds
    • Groenink, J.A., Janse, P.H.: A generalized approach to the defect chemistry of ternary compounds. Z. Physik. Chem. N. F. 110, 17–28 (1978)
    • (1978) Z. Physik. Chem. N. F. , vol.110 , pp. 17-28
    • Groenink, J.A.1    Janse, P.H.2
  • 103
    • 0030142916 scopus 로고    scopus 로고
    • 2 on GaAs Substrate using metalorganic copper and gallium precursors
    • 2 on GaAs Substrate using metalorganic copper and gallium precursors. Jpn. J. Appl. Phys. 35, L531–L534 (1996)
    • (1996) Jpn. J. Appl. Phys. , vol.35 , pp. L531-L534
    • Shirakata, S.1    Tamura, K.2    Isomura, S.3
  • 112
    • 0347309249 scopus 로고    scopus 로고
    • The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds
    • Krustok, J., Collan, H., Yakushev, M., Hjelt, K.: The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds. Phys. Scripta T 79, 179–182 (1999)
    • (1999) Phys. Scripta T , vol.79 , pp. 179-182
    • Krustok, J.1    Collan, H.2    Yakushev, M.3    Hjelt, K.4
  • 120
    • 0023347583 scopus 로고
    • Phase relations in the ternary system Cu–In–Se
    • Boehnke, U.-C., Kühn, G.: Phase relations in the ternary system Cu–In–Se. J. Mater. Sci. 22, 1635–1641 (1987)
    • (1987) J. Mater. Sci. , vol.22 , pp. 1635-1641
    • Boehnke, U.-C.1    Kühn, G.2
  • 125
    • 0022562430 scopus 로고
    • 2 single crystals
    • 2 single crystals. Solar Cells 16, 91–100 (1986)
    • (1986) Solar Cells , vol.16 , pp. 91-100
    • Fearheiley, M.1
  • 127
    • 0000913014 scopus 로고
    • Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfaces
    • Walukiewicz, W.: Fermi level dependent native defect formation: consequences for metal–semiconductor and semiconductor–semiconductor interfaces. J. Vac. Sci. Technol. B 6, 1257–1262 (1988)
    • (1988) J. Vac. Sci. Technol. B , vol.6 , pp. 1257-1262
    • Walukiewicz, W.1
  • 128
    • 0000310749 scopus 로고
    • Mechanism of Fermi-level stabilization in semiconductors
    • Walukiewicz, W.: Mechanism of Fermi-level stabilization in semiconductors. Phys. Rev. B 37, 4760–4763 (1988)
    • (1988) Phys. Rev. B , vol.37 , pp. 4760-4763
    • Walukiewicz, W.1
  • 129
    • 84886261092 scopus 로고    scopus 로고
    • Defects and self-compensation in semiconductors
    • Siebentritt, S., Rau, U. (Eds.), pp., Springer, Berlin
    • Walukiewicz, W.: Defects and self-compensation in semiconductors, In Siebentritt, S., Rau, U. (Eds.) Wide-gap chalcopyrites, pp. 33–50, Springer, Berlin (2005)
    • (2005) Wide-Gap Chalcopyrites , pp. 33-50
    • Walukiewicz, W.1
  • 130
    • 1542673433 scopus 로고
    • Self-compensation in semiconductors: A review dedicated to the hundredth anniversary of the birthday of Yakov Il’ich Frenkel
    • Agrinskaya, N.V., Mashovets, T.V.: Self-compensation in semiconductors: a review dedicated to the hundredth anniversary of the birthday of Yakov Il’ich Frenkel. Semiconductors 28, 843–857 (1994)
    • (1994) Semiconductors , vol.28 , pp. 843-857
    • Agrinskaya, N.V.1    Mashovets, T.V.2
  • 131
    • 0000990319 scopus 로고    scopus 로고
    • Doping limits in II–VI compounds—challenges, problems and solutions
    • Desnica, U.V.: Doping limits in II–VI compounds—challenges, problems and solutions. Prog. Cryst. Growth Charact. 36, 291–357 (1998)
    • (1998) Prog. Cryst. Growth Charact. , vol.36 , pp. 291-357
    • Desnica, U.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.