-
2
-
-
0037618271
-
VI 2 chalcopyrites (A = Cu; B = Ga, In; C = S, Se)
-
suppl. 1
-
VI 2 chalcopyrites (A = Cu; B = Ga, In; C = S, Se). Jpn. J. Appl. Phys. 39 (suppl. 1), 123–126 (1999)
-
(1999)
Jpn. J. Appl. Phys.
, vol.39
, pp. 123-126
-
-
Fiechter, S.1
Tomm, Y.2
Diesner, K.3
Weiss, T.4
-
3
-
-
84985757188
-
VI 2 chalcopyrite semiconductors
-
VI 2 chalcopyrite semiconductors. Cryst. Res. Technol. 18, 901–906 (1983)
-
(1983)
Cryst. Res. Technol.
, vol.18
, pp. 901-906
-
-
Neumann, H.1
-
4
-
-
0031366893
-
-
In: Basore, P. (ed.) 26th IEEE PV Specialist Conference, pp., IEEE, New York
-
2. In: Basore, P. (ed.) 26th IEEE PV Specialist Conference, pp. 313–318. IEEE, New York (2000)
-
(2000)
2
, pp. 313-318
-
-
Zunger, A.1
Zhang, S.B.2
Wei, S.-H.3
-
6
-
-
0036467917
-
Wide gap chalcopyrites: Material properties and solar cells
-
Siebentritt, S.: Wide gap chalcopyrites: material properties and solar cells. Thin Solid Films 403–404, 1–8 (2002)
-
(2002)
Thin Solid Films
, vol.403-404
, pp. 1-8
-
-
Siebentritt, S.1
-
7
-
-
0038575800
-
2 thin-film solar cells
-
2 thin-film solar cells. Prog. Photovolt. Res. Appl. 11, 225–230 (2003)
-
(2003)
Prog. Photovolt. Res. Appl.
, vol.11
, pp. 225-230
-
-
Ramanathan, K.1
Contreras, M.A.2
Perkins, C.L.3
Asher, S.4
Hasoon, F.S.5
Keane, J.6
Young, D.7
Romero, M.8
Metzger, W.9
Noufi, R.10
Ward, J.11
Duda, A.12
-
8
-
-
0347365802
-
2 thin-film solar cells
-
2 thin-film solar cells. Prog. Photovolt. Res. Appl. 11, 535–541 (2003)
-
(2003)
Prog. Photovolt. Res. Appl.
, vol.11
, pp. 535-541
-
-
Young, D.L.1
Keane, J.2
Duda, A.3
Abushama, J.A.M.4
Perkins, C.L.5
Romero, M.6
Noufi, R.7
-
12
-
-
84984094075
-
Donor–acceptor pairs in semiconductors
-
Williams, F.: Donor–acceptor pairs in semiconductors. Phys. stat. sol. 25, 493–512 (1968)
-
(1968)
Phys. Stat. Sol.
, vol.25
, pp. 493-512
-
-
Williams, F.1
-
13
-
-
77957062535
-
Photoluminescence: theory
-
Willardson, R.K., Beer, A.C. (eds.), Academic Press, New York
-
Bebb, H.B., Williams, E.W.: Photoluminescence: theory. In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals, vol. 8: Transport and Optical Phenomena, pp. 181–320. Academic Press, New York (1972)
-
(1972)
Semiconductors and Semimetals
, pp. 181-320
-
-
Bebb, H.B.1
Williams, E.W.2
-
14
-
-
2442496165
-
Inter-impurity recombinations in semiconductors
-
McCaldin, J.O., Somorjai, G. (eds.), pp., Pergamon Press, Oxford
-
Dean, P.J.: Inter-impurity recombinations in semiconductors. In: McCaldin, J.O., Somorjai, G. (eds.): Progress in Solid State Chemistry, vol. 8, pp. 1–126. Pergamon Press, Oxford (1973)
-
(1973)
Progress in Solid State Chemistry, Vol. 8
, pp. 1-126
-
-
Dean, P.J.1
-
15
-
-
0001007641
-
Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
-
Schmidt, T., Lischka, K., Zulehner, W.: Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. B 45, 8989– 8994 (1992)
-
(1992)
Phys. Rev. B
, vol.45
, pp. 8989-8994
-
-
Schmidt, T.1
Lischka, K.2
Zulehner, W.3
-
16
-
-
0001512375
-
Experimental proof of the existence of a new complex in silicon
-
Haynes, J.R.: Experimental proof of the existence of a new complex in silicon. Phys. Rev. Lett. 4, 361–363 (1960)
-
(1960)
Phys. Rev. Lett.
, vol.4
, pp. 361-363
-
-
Haynes, J.R.1
-
17
-
-
0001254525
-
Theory of excitons bound to ionized impurities in semiconductors
-
Sharma, R.R., Rodriguez, S.: Theory of excitons bound to ionized impurities in semiconductors. Phys. Rev. 153, 823–827 (1967)
-
(1967)
Phys. Rev.
, vol.153
, pp. 823-827
-
-
Sharma, R.R.1
Rodriguez, S.2
-
18
-
-
0000174862
-
Theory of excitons bound to neutral impurities in polar semiconductors
-
Atzmüller, H., Fröschl, F., Schröder, U.: Theory of excitons bound to neutral impurities in polar semiconductors. Phys. Rev. B 19, 3118–3129 (1979)
-
(1979)
Phys. Rev. B
, vol.19
, pp. 3118-3129
-
-
Atzmüller, H.1
Fröschl, F.2
Schröder, U.3
-
19
-
-
0002504193
-
Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
-
Eagles, D.M.: Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band. J. Phys. Chem. Solids 16, 76–83 (1960)
-
(1960)
J. Phys. Chem. Solids
, vol.16
, pp. 76-83
-
-
Eagles, D.M.1
-
20
-
-
0345786214
-
Excitation dependence of photoluminescence in n-and p-type compensated GaAs
-
Kelly, P.L., Lax, B., Tannenwald, P.E. (eds.), pp., McGraw Hill, New York
-
Nathan, M.I., Morgan, T.N.: Excitation dependence of photoluminescence in n-and p-type compensated GaAs. In: Kelly, P.L., Lax, B., Tannenwald, P.E. (eds.) Physic of Quantum Electronics, pp. 478–486. McGraw Hill, New York (1966)
-
(1966)
Physic of Quantum Electronics
, pp. 478-486
-
-
Nathan, M.I.1
Morgan, T.N.2
-
21
-
-
0000603267
-
-
Maeda, K.: Temperature dependence of pair band luminescence in GaP. J. Phys. Chem. Solids 26, 595–605 (1965)
-
-
-
Maeda, K.1
-
23
-
-
0032000198
-
-
Shibata, H.: Negative thermal quenching curves in photoluminescence of solids. Jpn. J. Appl. Phys. 37, 550–553 (1997)
-
-
-
Shibata, H.1
-
25
-
-
84927475999
-
Edge luminescence of direct-gap semiconductors
-
Levanyuk, A.P., Osipov, V.V.: Edge luminescence of direct-gap semiconductors. Sov. Phys. Usp. 24, 187–215 (1981)
-
(1981)
Sov. Phys. Usp.
, vol.24
, pp. 187-215
-
-
Levanyuk, A.P.1
Osipov, V.V.2
-
26
-
-
0001122983
-
Shifting photoluminescence band in high-resistivity Li-compensated GaAs
-
Gislason, H.P., Yang, B.H., Linnarsson, M.K.: Shifting photoluminescence band in high-resistivity Li-compensated GaAs. Phys. Rev. B 47, 9418–9424 (1993)
-
Phys. Rev. B
, vol.47
, pp. 9418-9424
-
-
Gislason, H.P.1
Yang, B.H.2
Linnarsson, M.K.3
-
27
-
-
0030562279
-
-
Bäume, P., Gutowski, J., Kurtz, E., Hommel, D., Landwehr, G.: Intensity-dependent energy and lineshape variation of donor–acceptor-pair bands in highly compensated ZnSe. N. J. Cryst. Growth 159, 252–256
-
-
-
Bäume, P.1
Gutowski, J.2
Kurtz, E.3
Hommel, D.4
Landwehr, G.5
-
28
-
-
0030562145
-
Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOCVD
-
Heitz, R., Moll, E., Kutzer, V., Wiesmann, D., Lummer, B., Hoffmann, A., Broser, I., Bäume, P., Taudt, W., Söllner, J., Heuken, M.: Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOCVD. J. Cryst. Growth 159, 307–311 (1996)
-
(1996)
J. Cryst. Growth
, vol.159
, pp. 307-311
-
-
Heitz, R.1
Moll, E.2
Kutzer, V.3
Wiesmann, D.4
Lummer, B.5
Hoffmann, A.6
Broser, I.7
Bäume, P.8
Taudt, W.9
Söllner, J.10
Heuken, M.11
-
29
-
-
0003624373
-
-
Springer, Berlin Heidelberg New York
-
Seeger, K.: Semiconductor Physics. Springer, Berlin Heidelberg New York (2002)
-
(2002)
Semiconductor Physics
-
-
Seeger, K.1
-
31
-
-
77957045562
-
-
Wiley, J.D.: Mobility of holes in III–V compounds. In: Willardson, R.K., Beer, A.C. (eds.) Semiconductors and Semimetals—Transport Phenomena, vol. 10, pp. 91–174. Academic Press, New York (1975)
-
-
-
Wiley, J.D.1
-
32
-
-
36149002185
-
-
Pearson, G.L., Bardeen, J.: Electrical properties of pure silicon and alloys containing boron and phosphorus. Phys. Rev. 75, 865–883 (1949)
-
-
-
Pearson, G.L.1
Bardeen, J.2
-
33
-
-
0016434782
-
-
Lee, T.F., McGill, T.C.: Variation of impurity-to-band activation energies with impurity density. J. Appl. Phys. 46, 373–380 (1975)
-
-
-
Lee, T.F.1
McGill, T.C.2
-
34
-
-
0012931910
-
-
Neumark, G.F.: Concentration and temperature dependence of impurity-to-band activation energies. Phys. Rev. B 5, 408–417 (1972)
-
-
-
Neumark, G.F.1
-
35
-
-
0023311755
-
-
Podör, B.: On the concentration dependence of the thermal ionisation energy of impurities in InP. Semicond. Sci. Technol. 2, 177–178 (1987)
-
-
-
Podör, B.1
-
36
-
-
77956737431
-
-
pp., Springer, Berlin Heidelberg New York
-
Podör, B.: On the concentration dependence of the thermal activation energy of impurities in semiconductors. In: Ferenczi, G., Beleznay, F. (eds.) New Developments in Semiconductor Physics, pp. 55–60. Springer, Berlin Heidelberg New York (1988)
-
(1988)
New Developments in Semiconductor Physics
, pp. 55-60
-
-
Podör, B.1
-
37
-
-
0019438073
-
-
Monecke, J., Siegel, W., Ziegler, E., Kühnel, G.: On the concentration dependence of the thermal impurity-to-band activation energies in semiconductors. Phys. stat. sol. (b) 103, 269–279 (1981)
-
On the Concentration Dependence of the Thermal Impurity-To-Band Activation Energies in Semiconductors
-
-
Monecke, J.1
Siegel, W.2
Ziegler, E.3
Kühnel, G.4
-
39
-
-
0015565949
-
Sign of the Hall coefficient in hopping-type charge-transport
-
Holstein, T.: Sign of the Hall coefficient in hopping-type charge-transport. Philosophical Magazine 27 (1), 225–233 (1973)
-
(1973)
Philosophical Magazine
, vol.27
, Issue.1
, pp. 225-233
-
-
Holstein, T.1
-
40
-
-
84984136398
-
On the Hall effect in hopping transport
-
Klinger, M.I.: On the Hall effect in hopping transport. Phys. stat. sol. 31, 545–555 (1969)
-
(1969)
Phys. Stat. Sol.
, vol.31
, pp. 545-555
-
-
Klinger, M.I.1
-
41
-
-
0347977932
-
The Hall mobility in hopping conduction
-
Movaghar, B., Pohlmann, B., Würtz, D.: The Hall mobility in hopping conduction. J. Phys. C: Solid State Phys. 14, 5127–5137 (1981)
-
(1981)
J. Phys. C: Solid State Phys.
, vol.14
, pp. 5127-5137
-
-
Movaghar, B.1
Pohlmann, B.2
Würtz, D.3
-
42
-
-
85072859459
-
-
Mott, N.F.: Metal–Insulator Transitions. Taylor & Francis, London (1974)
-
-
-
Mott, N.F.1
-
48
-
-
0016916882
-
-
2. J. Appl. Phys. 47, 677–684 (1976)
-
-
-
Yu, P.W.1
-
51
-
-
0021629104
-
-
2 compounds. J. Phys. Chem. Solids 45, 1091–1097 (1984)
-
-
-
Massé, G.1
-
54
-
-
0000166573
-
Optical properties of copper indium diselenide near the fundamental absorption edge. Phys
-
Rincón, C., Bellabarba, C.: Optical properties of copper indium diselenide near the fundamental absorption edge. Phys. Rev. B 33, 7160–7163 (1986)
-
(1986)
Rev. B
, vol.33
, pp. 7160-7163
-
-
Rincón, C.1
Bellabarba, C.2
-
55
-
-
0013293735
-
2 compounds
-
2 compounds. J. Appl. Phys. 68, 2206–2210 (1990)
-
(1990)
J. Appl. Phys.
, vol.68
, pp. 2206-2210
-
-
Massé, G.1
-
60
-
-
0001217705
-
2 on GaAs(001) grown by molecular beam epitaxy
-
2 on GaAs(001) grown by molecular beam epitaxy. Appl. Phys. Lett. 67, 1289–1291 (1995)
-
Appl. Phys. Lett.
, vol.67
, pp. 1289-1291
-
-
Niki, S.1
Shibata, H.2
Fons, P.J.3
Yamada, A.4
Obara, A.5
Makita, Y.6
Kurafuji, T.7
Chichibu, S.8
Nakanishi, H.9
-
62
-
-
85072868404
-
2 films
-
Schmid, J., Ossenbrinck, H.A., Helm, P., Ehmann, H., Dunlop, E.D. (eds.), pp
-
2 films. In: Schmid, J., Ossenbrinck, H.A., Helm, P., Ehmann, H., Dunlop, E.D. (eds.) 2nd World Conference on Photovoltaic Solar Energy Conversion, pp 610 (1998)
-
(1998)
2Nd World Conference on Photovoltaic Solar Energy Conversion
, pp. 610
-
-
Niki, S.1
Suzuki, R.2
Ishibashi, S.3
Ohdaira, T.4
Fons, P.J.5
Yamada, A.6
Oyanagi, H.7
-
76
-
-
0032025239
-
2 single crystal
-
2 single crystal. Jpn. J. Appl. Phys. 37, L269–L271 (1998)
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. L269-L271
-
-
Chathraphorn, S.1
Yoodee, K.2
Songpongs, P.3
Chityuttakan, C.4
Sayavong, K.5
Wongmanerod, S.6
Holtz, P.O.7
-
79
-
-
33749589366
-
A generalized approach to the defect chemistry of ternary compounds
-
Groenink, J.A., Janse, P.H.: A generalized approach to the defect chemistry of ternary compounds. Z. Physik. Chem. N. F. 110, 17–28 (1978)
-
(1978)
Z. Physik. Chem. N. F.
, vol.110
, pp. 17-28
-
-
Groenink, J.A.1
Janse, P.H.2
-
103
-
-
0030142916
-
2 on GaAs Substrate using metalorganic copper and gallium precursors
-
2 on GaAs Substrate using metalorganic copper and gallium precursors. Jpn. J. Appl. Phys. 35, L531–L534 (1996)
-
(1996)
Jpn. J. Appl. Phys.
, vol.35
, pp. L531-L534
-
-
Shirakata, S.1
Tamura, K.2
Isomura, S.3
-
106
-
-
0038356661
-
2 single crystals and thin films
-
2 single crystals and thin films. Thin Solid Films 431–432, 214–218 (2003)
-
(2003)
Thin Solid Films
, vol.431-432
, pp. 214-218
-
-
Meeder, A.1
Fuertes-Marrón, D.2
Tezlevan, V.3
Arushanov, E.4
Rumberg, A.5
Schedel-Niedrig, T.6
Lux-Steiner, M.C.7
-
111
-
-
0033906822
-
2: The influence of gallium
-
2: the influence of gallium. Thin Solid Films 361/362, 400–405 (2000)
-
(2000)
Thin Solid Films
, vol.361-362
, pp. 400-405
-
-
Dirnstorfer, I.1
Burkhardt, W.2
Kriegseis, W.3
Österreicher, I.4
Alves, H.5
Hofmann, D.M.6
Ka, O.7
Polity, A.8
Meyer, B.K.9
Braunger, D.10
-
112
-
-
0347309249
-
The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds
-
Krustok, J., Collan, H., Yakushev, M., Hjelt, K.: The role of spatial potential fluctuations in the shape of the PL bands of multinary semiconductor compounds. Phys. Scripta T 79, 179–182 (1999)
-
(1999)
Phys. Scripta T
, vol.79
, pp. 179-182
-
-
Krustok, J.1
Collan, H.2
Yakushev, M.3
Hjelt, K.4
-
117
-
-
36449009245
-
2 layers grown by low-pressure metalorganic chemical-vapor depostion
-
2 layers grown by low-pressure metalorganic chemical-vapor depostion. J. Appl. Phys. 76, 3009–3015 (1994)
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 3009-3015
-
-
Chichibu, S.1
Harada, Y.2
Uchida, M.3
Wakiyama, T.4
Matsumoto, S.5
Shirakata, S.6
Isomura, S.7
Higuchi, H.8
-
118
-
-
0037291818
-
2 photovoltaic applications
-
2 photovoltaic applications. J. Cryst. Growth 248, 163–168 (2003)
-
(2003)
J. Cryst. Growth
, vol.248
, pp. 163-168
-
-
Artaud-Gillet, M.C.1
Duchemin, S.2
Odedra, R.3
Orsal, G.4
Rega, N.5
Rushworth, S.6
Siebentritt, S.7
-
120
-
-
0023347583
-
Phase relations in the ternary system Cu–In–Se
-
Boehnke, U.-C., Kühn, G.: Phase relations in the ternary system Cu–In–Se. J. Mater. Sci. 22, 1635–1641 (1987)
-
(1987)
J. Mater. Sci.
, vol.22
, pp. 1635-1641
-
-
Boehnke, U.-C.1
Kühn, G.2
-
125
-
-
0022562430
-
2 single crystals
-
2 single crystals. Solar Cells 16, 91–100 (1986)
-
(1986)
Solar Cells
, vol.16
, pp. 91-100
-
-
Fearheiley, M.1
-
127
-
-
0000913014
-
Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfaces
-
Walukiewicz, W.: Fermi level dependent native defect formation: consequences for metal–semiconductor and semiconductor–semiconductor interfaces. J. Vac. Sci. Technol. B 6, 1257–1262 (1988)
-
(1988)
J. Vac. Sci. Technol. B
, vol.6
, pp. 1257-1262
-
-
Walukiewicz, W.1
-
128
-
-
0000310749
-
Mechanism of Fermi-level stabilization in semiconductors
-
Walukiewicz, W.: Mechanism of Fermi-level stabilization in semiconductors. Phys. Rev. B 37, 4760–4763 (1988)
-
(1988)
Phys. Rev. B
, vol.37
, pp. 4760-4763
-
-
Walukiewicz, W.1
-
129
-
-
84886261092
-
Defects and self-compensation in semiconductors
-
Siebentritt, S., Rau, U. (Eds.), pp., Springer, Berlin
-
Walukiewicz, W.: Defects and self-compensation in semiconductors, In Siebentritt, S., Rau, U. (Eds.) Wide-gap chalcopyrites, pp. 33–50, Springer, Berlin (2005)
-
(2005)
Wide-Gap Chalcopyrites
, pp. 33-50
-
-
Walukiewicz, W.1
-
130
-
-
1542673433
-
Self-compensation in semiconductors: A review dedicated to the hundredth anniversary of the birthday of Yakov Il’ich Frenkel
-
Agrinskaya, N.V., Mashovets, T.V.: Self-compensation in semiconductors: a review dedicated to the hundredth anniversary of the birthday of Yakov Il’ich Frenkel. Semiconductors 28, 843–857 (1994)
-
(1994)
Semiconductors
, vol.28
, pp. 843-857
-
-
Agrinskaya, N.V.1
Mashovets, T.V.2
-
131
-
-
0000990319
-
Doping limits in II–VI compounds—challenges, problems and solutions
-
Desnica, U.V.: Doping limits in II–VI compounds—challenges, problems and solutions. Prog. Cryst. Growth Charact. 36, 291–357 (1998)
-
(1998)
Prog. Cryst. Growth Charact.
, vol.36
, pp. 291-357
-
-
Desnica, U.V.1
|