Wafer Bonding

Comprehensive Microsystems

Volumn 1, Issue , 2007, Pages 235-270

  Najafi, Khalil ^a   Harpster, Timothy J ^a   Kim, Hanseup ^a   Mitchell, Jay S ^a   Welch, Warren C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Anodic; Assembly; Bonding; Dielectric heating; Electrostatic; Eutectic; Fusion; Glass; Hydrophilic; Hydrophobic; Laser; Localized heating; MEMS; Micromachined actuators; Micromachined sensors; Microsystems; Microwave heating; Packaging; Polymer; Rapid thermal processing; RF heating; Sealing; Silicon; Solder; Ultrasonic heating; Wafer bonding; Welding

Indexed keywords

EID: 85069993815     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-044452190-3.00008-2     Document Type: Chapter

References (208)

1. Adachi T. Eutectic reaction of gold thin-films deposited on silicon surface. Surf. Sci. 2002, 506:305-312.
2. Adams D., Julies B.A., Mayer J.W., Alford T.L. The effect of metals (Au, Ag) and oxidizing ambient on interfacial reactions in Au/Si and Ag/Si systems. Appl. Surf. Sci. 2003, 216:163-168.
3. Ageoroges C., Ye L. Fusion Bonding of Polymer Composites 2002, Springer, New York.
4. Akatsu T., Hosoda N., Suga T., Rühle M. Atomic Structure of Al/Al interface via the surface activated bonding method. J. Mater. Sci. 1999, 34:4133-4139.
5. Albaugh K.B. Electrode phenomena during anodic bonding of silicon to sodium borosilicate glass. J. Electrochem. Soc. 1991, 138(10):3089-3094.
6. Wafer Bonding: Applications and Technology 2004, Springer, New York. M. Alexe, U. Gösele (Eds.).
7. Amirfeiz P., Bengtsson S., Bergh M., Zanghellini E., Borjesson L. Formation of silicon structures by plasma-activated wafer bonding. J. Electrochem. Soc. 2000, 147:2693-2698.
8. Ando D., Oishi K., Nakamura T., Umeda S. Glass direct bonding technology for hermetic seal package. Proc. IEEE Micro Electro Mechanical Systems 1997, 186-190.
9. Anthony T.R. Anodic bonding of imperfect surfaces. J. Appl. Phys. 1983, 54(5):2419-2428.
10. Barth P.W. Silicon fusion bonding for fabrication of sensors, actuators and microstructures. Sens. Actuators 1990, 23:919-926.
11. Bayrashev A., Ziaie B. Silicon wafer bonding with an insulator interlayer using RF dielectric heating. 15th IEEE Int. Conf. Micro Electro Mechanical Systems 2002, 419-422.
12. 2 plasma activated wafer bonding. Microsyst. Tech. 2006, V12:383.
13. Berthold A., Nicola L., Sarro P.M., Vellekoop M.J. Glass-to-glass anodic bonding with standard IC technology thin film as intermediate layers. Sens. Actuators. 2000, A82:224-228.
14. Bilenberg B., Nielsen T., Clausen B., Kristensen A. PMMA to SU-8 bonding for polymer based lab-on-a-chip systems with integrated optics. J. Micromech. Microeng. 2004, 14:814-818.
15. Blasquez G., Favaro P. Silicon pyrex electrostatic bonding: Applicability to industrial microdevices production. Technical Digest, The 11th IEEE Int. Conf. On Solid-State Sensors and Actuators (Transducers '01) 2001, 194-197.
16. Blasquez G., Favaro P. Silicon glass anodic bonding under partial vacuum conditions: Problems and solutions. Sens. Actuators A Phys. 2002, 101(1):156-159.
17. Bosco N.S., Zok F.W. Critical interlayer thickness for transient liquid phase bonding in the Cu-Sn system. Acta Mater. 2004, 52:2965-2972.
18. Bower R.W., Chin F.Y.-J. Low temperature direct silicon wafer bonding using argon activation. Jpn. J. Appl. Phys. Part 2 (Lett.) 1997, 36(5A):L527-L528.
19. 4 direct bonding. Appl. Phys. Lett. 1993, 62(26):3485-3487.
20. Briand D., Weber P., De Rooij N.F. Bonding properties of metals anodically bonded to glass. Sens. Actuators A Phys. 2004, 114(2-3):543-549.
21. Brooks A.D., Donovan R.P., Hardesty C.A. Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass. J. Electrochem. Soc. Solid-State Sci. Technol. 1972, 119:545-546.
22. Brown J., Maier N., Lee K.Y., Ziegltrum L., St. Leger J. Laser welding: Providing alignment precision and accuracy to substrate level packaging. Proc. SPIE Int. Soc. Opt. Eng. 1999, 3874:158-164.
23. 0.19 alloy. J. Appl. Phys. 1982, 53:3616-3619.
24. Budraa N.K., Jackson H.W., Barmatz M., Pike W.T., Mai J.D. Low pressure and low temperature hermetic wafer bonding using microwave heating. IEEE Int. Conf. on Microelectromechanical Systems 1999, 490-492.
25. Cao A, Chiao M, Lin L 2001 Selective and localized bonding using induction heating. Tech. Dig., The 11th IEEE Int. Conf. Solid-State Sensors and Actuators, Transducers '01, Munich, Germany, June 2001.
26. Chang P.-H., Berman G., Shen C.C. Transmission electron microscopy of gold-silicon interactions on the backside of silicon wafers. J. Appl. Phys. 1988, 63:1473-1477.
27. Chang-Chien P., Wise K.D. Wafer-level packaging using localized mass deposition. Tech. Dig., 11th Int. Conf. Solid-State Sensors and Actuators, Transducers '01 2001, 182-185.
28. Chavan A., Wise K. Batch-processed vacuum-sealed capacitive pressure sensors. J. Microelectromech. Syst. 2001, 10(4):580-588.
29. Cheng Y.T., Lin L., Najafi K. Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging. Tech. Dig. Solid-State Sensor and Actuator Workshop 1998, 233-236.
30. Cheng Y.T., Lin L., Najafi K. Localized bonding with PSG or indium solder as intermediate layer. Digest, IEEE Microelectromechanical Systems (MEMS) Conference 1999, 285-289.
31. Cheng Y.T., Lin L., Najafi K. Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging. J. Microelectromech. Syst. 2000, 9(1):3-8.
32. Cheng Y.T., Lin L., Najafi K. Fabrication and hermeticity testing of a glass-silicon package formed using localized aluminum/silicon-to-glass bonding. Tech. Dig., 13th IEEE Int. Conf. Microelectromechanical Systems (MEMS) 2000, 757-762.
33. Cheng Y.T., Lin L., Najafi K. Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging. IEEE/ASME J. Microelectromech. Syst. 2000, 9:3-8.
34. Cheng Y.T., Hsu W.T., Lin L., Nguyen C.T., Najafi K. Vacuum packaging technology using localized aluminum/silicon-to-glass bonding. Proc. 14th IEEE Microelectromechanical Systems Conference (MEMS 2001) 2001, 18-21.
35. Cheng Y.T., Lin L., Najafi K. A hermetic glass-silicon package formed using localized aluminum/silicon-glass bonding. IEEE/ASME J. Microelectromech. Syst. 2001, 10(3):392-399.
36. Cheng Y.T., Hsu W.T., Lin L., Nguyen C.T., Najafi K. Vacuum packaging using localized aluminum/silicon-to-glass bonding using localized aluminum/silicon-to-glass bonding. IEEE/ASME J. Microelectromech. Syst. 2002, 11:556-565.
37. Chiao M., Lin L. Hermetic wafer bonding based on rapid thermal processing. Sens. Actuators Phys. 2001, 91(3):398-402.
38. Chiao M., Lin L. A wafer-level vacuum packaging process by RTP aluminum-to-nitride bonding. Tech. Dig., Solid-State Sensor, Actuator and Microsystems Workshop 2002, 81-84.
39. Choi W.B., Ju W.B., Lee Y.H., Haskard Y.H., Sung M.Y., Oh M.H. Anodic bonding technique under low-temperature and low-voltage using evaporated glass. Proc. IVMC '96 1996, 427-430.
40. Choi W., Ju B., Lee Y., Jeong J., Haskard M.R., Lee N., Sung M., Oh M. Experimental analysis on the anodic bonding with an evaporated glass layer. J Micromech. Microeng. 1997, 7:316-322.
41. Chou T K A (2001) All-silicon micromachined acoustic ejector array for micro propulsion and flow control. Doctoral dissertation, University of Michigan.
42. Chou T.K.A., Najafi K. 3D MEMS fabrication using low-temperature wafer bonding with benzocyclobutene (BCB). Transducers '01, Eurosensors XV, 11th Int. Conf. Solid-State Sensors and Actuators 2001, 1570-2573.
43. Christensen C., Bouwstra S. Eutectic bonds on wafer scale by thin film multilayers. Proc. SPIE Int. Soc. Opt. Eng. 1996, 2879:288-290.
44. Chuang R.W., Lee C.C. High-temperature non-eutectic indium-tin joints fabricated by a fluxless process. Thin Sol. Films 2002, 414:175-179.
45. Chuang R.W., Lee C.C. Silver-indium joints produced at low temperature for high temperature devices. IEEE Trans. Components Packaging Technol. 2002, 25:453-458.
46. Chung T.R., Hosoda N., Takagi H., Suga T. 1.3-μm InGaAs/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method of room temperature. Jpn. J. Appl. Phys. 1997, 72:1565-1566.
47. Condra L.W., Svitak J.J., Pense A.W. The high temperature deformation properties of gold and thermocompression bonding. IEEE Trans. Parts Hybrids Packaging 1975, PHP-11:290-296.
48. Cook R.F., Liniger E.G. Stress corrosion cracking of low dielectric constant spin-on-glass thin films. J. Electrochem. Soc. 1999, 146:4439-4448.
49. Cozma A., Puers B. Characterization of the electrostatic bonding of silicon and pyrex glass. J. Micromech. Microeng. 1995, 5:98-102.
50. Dalton R.H. Solder glass sealing. J. Am. Ceramic Soc. 1956, 39(3):109-112.
51. Deligeorgis G., Gallis S., Androulidaki M., Cengher D., Hatzopoulos Z., Alexe M., Dragoi V., Kyriakis-Bitzaros E.D., Halkias G., Peiro F., Georgakilas A. Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer. 2002 12th Int. Conf. Semiconducting and Insulating Materials (SIMC-XII-2002) 2002, 125-128.
52. Dokmeci M (1999) Hermetic glass-silicon micropackages and feedthroughs for neural prostheses. Doctoral dissertation, University of Michigan.
53. Dokmeci M., Von Arx J., Najafi K. Accelerated testing of anodically bonded glass-silicon packages in salt water. Proc. 9th. Int. Conf. Solid-State Sensors and Actuators 1997, 283-286.
54. Dragoi V., Alexe M., Reiche M., Goesele U. Low temperature direct wafer bonding of silicon using a glass intermediate layer. Proc. Int. Semicond. Conf., CAS, 2 1999, 443-446.
55. Dragoi V., Glinsner T., Mittendorfer G., Wieder B., Lindner P. Adhesive wafer bonding for MEMS applications. Smart Sensors, Actuators, and MEMS 2003, 160-167.
56. Drost A., Klink G., Scherbaum S., Feil M. Simultaneous fabrication of dielectric and electrical joints by wafer bonding. Proc. 1998 Conf. Micromachined Devices and Components IV 1998, 62-71.
57. Dunn M., Cunningham S.J., Labossiere P.E.W. Initiation toughness of silicon/glass anodic bonds. Acta Mater. 2000, 48(3):735-744.
58. Eaton W.P., Risbud S.H., Smith R.L. Silicon wafer-to-wafer bonding at T<200°C with polymethylmethacrylate. Appl. Phys. Lett. 1994, 65:439-441.
59. Ebert M., Bagdahn J. Determination of residual stress in glass frit bonded MEMS by finite element analysis. Proc. 5th Int. Conf. Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004 2004, 407-412.
60. Eichler M., Michel B., Thomas M., Klages C.P., Ruddy C., Reinecke H., Reiche M., Radu I., Gabriel M. Ambient pressure plasma activation for low-temperature bonding. 2nd Int. Workshop Wafer Bonding for MEMS Technologies 2006, 35-36.
61. Esashi M. Packaged sensors, microactuators and three-dimensional microfabrication. J. Robot. Mechatron. 1995, 7:200-203.
62. Esashi M., Nakano A., Shoji S., Hebiguchi H. Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. Sens. Actuators A Phys. 1990, 23(1-3):931-934.
63. Esashi M., Ura N., Matsumoto Y. Anodic bonding for integrated capacitive sensors. Proc. of Micro Electro Mechanical Systems 1992, 43-48.
64. Farrens S.N. Packaging methods and techniques for MOEMS and MEMS. Proc. SPIE 2005, 5716:9-18.
65. Farrens S.N., Dekker J.R., Smith J.K., Roberds B.E. Chemical free room temperature wafer to wafer direct bonding. J. Electrochem. Soc. 1995, 142:3949-3955.
66. Fehlner F.P., Dambaugh W.H., Miller R.A. Refractory glass substrates for thin film transistors. Proc. 6th Annu. Int. Display Conf. 1986, 200-203.
67. Folsom J, Haller J L, and Chilcott D W (1999) Method of protecting silicon wafers during wet chemical etching US Pat. 5 879 572.
68. Frye R.C., Griffith J.E., Wong Y.H. A field-assisted bonding process for silicon dielectric isolation. J. Electrochem. Soc. 1986, 13(8):1673.
69. Furman B.K., Mita S.G. Gold-Gold (Au-Au) thermocompression (TC) bonding of very large arrays. Proc. 42nd Electronic Components and Technology Conference 1992, 883-889.
70. Galchev T, Welch W C III, Najafi K 2007 Low-temperature MEMS process using plasma activated silicon-on-silicon (SOS) bonding. Proc. IEEE Int. Conf. Micro Electro Mechanical Systems (MEMS Conference), Kobe, Japan, January 2007.
71. Gale W.F. Transient liquid phase bonding of intermetallic compounds. Thermec 2003 Processing and Manufacturing of Advanced Materials 2003, 1891-1896.
72. Go J.S., Cho Y. Experimental evaluation of anodic bonding process using Taguchi method for maximum interfacial fracture toughness. Proc. 1998 IEEE 11th Annu. Int. Workshop Micro Electro Mechanical Systems 1998, 318-321.
73. Goesele U., Tong Q., Schumacher A., Kraeuter G., Reiche M., Ploessl A., Kopperschmidt P., Lee T., Kim W. Wafer bonding for microsystems technologies. Sens. Actuators A Phys. 1999, 74:161-168.
74. Goyal A., Tadigadapa S., Islam R. Solder bonding for microelectromechanical systems (MEMS) applications. Reliability, Testing, and Characterization of MEMS/MOEMS II 2003, 281-288.
75. Goyal A., Cheong J., Tadigadapa S. Tin-based solder bonding for MEMS fabrication and packaging applications. J. Micromech. Microeng. 2004, 14:819-825.
76. Han A., Oh K.W., Bhansali S., Henderson T.H., Ahn C.H. A low temperature biochemically compatible bonding technique using fluoropolymers for biochemical microfluidic systems. 13th Annu. Int. Conf. Micro Electro Mechanical Systems 2000, 414-428.
77. Hansford D, Desai T A, Tu J, Ferrari M 1998 Biocompatible silicon wafer bonding for biomedical microdevices. Proc. SPIE, BiOS '98: Micro and Nano-Fabricated Structures and Devices for Biomedical and Environmental Applications, [3258-23], San Jose, CA, USA.
78. Hara T, Kobayashi S, Ohwada K 1999 A new fabrication method for low-pressure package with glass-silicon-glass structure and its stability. Int. Conf. Solid-State Sensors and Actuators, Transducers '99, Sendai, Japan.
79. Harendt C., Graf H.G., Penteker E., Höfflinger B. Wafer bonding: Investigation and in situ observation of the bond process. Sens. Actuators A Phys. 1990, 23(1-3):927-930.
80. Harendt C., Höfflinger B., Graf H.G., Penteker E. Silicon direct bonding for sensor applications: Characterization of the bond quality. Sens. Actuators A Phys. 1991, 25-27:87-92.
81. Harendt C., Höfflinger B., Graf H.G., Penteker E. Wafer fusion bonding: Characterization of the bond quality. Sens. Mater. 1992, 3:173-187.
82. Harendt H.G., Graf, Höfflinger B., Penteker J.E. Silicon fusion bonding and its characterization. J. Micromech. Microeng. 1992, 2:113-116.
83. Harpster T J 2005 Hermetic packaging and bonding technologies. Doctoral dissertation, University of Michigan.
84. Harpster T.J., Najafi K. Long-term testing of hermetic anodically bonded glass-silicon packages. 15th IEEE Int. Conf. Micro Electro Mechanical Systems MEMS 2002 2002, 423-426.
85. Harpster T J, Najafi K 2003 Field-assisted bonding of glass to SiAu eutectic solder for packaging applications. Proceedings, International IEEE Microelectromechanical Systems Conference (MEMS Conference), Kyoto, Japan, January 2003.
86. He G.H., Lin L., Cheng Y.T. Localized CVD bonding for MEMS packaging. 10th Int. Conf. Solid-State Sensors and Actuators, Transducers '99, Tech. Dig. 1999, 1312-1315.
87. Henmi H., Shoji S., Shoji Y., Yosimi K., Esashi M. Vacuum package for microresonators by glass-silicon anodic bonding. Int. Conf. Solid-State Sensors and Actuators, Transducers '93 1993, 584-587.
88. Henmi H., Shoji S., Shoji Y., Yoshimi K., Esashi M. Vacuum packaging for microsensors by glass-silicon anodic bonding. Sens. Actuators 1994, A43:243-248.
89. 2. J. Mater. Sci. 1998, 33:253-258.
90. Huang A., Lew J., Xu Y., Tai Y.-C., Ho C.-M. Microsensors and actuators for macrofluidic control. IEEE Sensor. J. 2004, 4:494-502.
91. Humpston G., Jacobson D.M. Principles of Soldering 2004, ASM International, Materials Park, OH.
92. Humpston G., Jacobson D.M., Sangha S.P.S. Diffusion soldering for electronics manufacturing. Endeavour 1994, 18:55-60.
93. Itoh T., Okada, Takagi H., Maeda R., Suga T. Room temperature vacuum sealing using surface activated bonding method. 12th Int. Conf. Solid-State Sensors, Actuators and Microsystems, Transducers '03 2003, Vol. 2:1828-1831.
94. Iyer S.S., Auberton-Herve A.J. Silicon Wafer Bonding Technology for VLSI and MEMS Applications (EMIS Processing Series 1) 2002, INSPEC, Inc., London.
95. Jeon N.L., Chiu D.T., Wargo C.J., Wu H., Choi I.S., Anderson J.R., Whitesides G.M. Design and fabrication of integrated passive valves and pumps for flexible polymer 3-dimensional microfluidic systems. Biomed. Microdevices 2002, 4:117-121.
96. Johnson A.A., Johnson D.N. Metallurgy of gold-silicon alloys, welding, failure analysis, and metallography. Microstructural Science 1987, vol. 14. American Society for Metals, published by the. M.R. Louthan, I. LeMay, G.F. Vander Voort (Eds.).
97. Johnson D.N., Biagtan E.C., Johnson A.A. Determination of the solubility of silicon in gold and the goldsilicon eutectic composition using a new quantitative metallographic technique. Scr. Metall. 1987, 21:1689-1692.
98. Kanda Y., Matsuda K., Murayama C., Sugaya J. The mechanism of field-assisted silicon glass bonding. Sens Actuators 1990, A21-A23:939-943.
99. Kato H. A simple method for characterizing the bondability of metallization surfaces. IEEE Trans. Component Packaging Manufact. Tech. 1987, CHMT-10:232-235.
100. Kato H. Eutectic reactions and textures of AuSi alloy films on single-crystal silicon. Jpn. J. Appl. Phys. Part 1 Regular Pap. Short Notes 1989, 28:953-956.
101. Katz A., Nakahara S., Geva M. In-situ stress measurements of gold films on glass substrates during thermal cycling. J. Appl. Phys. 1991, 70:7342-7348.
102. Kikuchi H., Torigoe H., Shoji S. Anodic bonding below 180°C for packaging and assembling of MEMS using lithium aluminosilicate-beta quartz glass-ceramic. IEEE Int. Conf. Micro Electro Mechanical Systems (MEMS) 1997, 482-487.
103. Kim H 2006 An integrated electrostatic peristaltic micro gas pump with active microvalves. Doctoral dissertation, University of Michigan.
104. Kim H., Najafi K. Characterization of low-temperature wafer bonding using thin film Parylene. IEEE J. Microelectromech. Syst. 2005, 14(6):1347-1355.
105. Kim H., Najafi K. Characterization of parylene-assisted wafer bonding: Long-term stability and influence of process chemicals. Tech. Dig., 13th Int. Conf. Solid-State Sensors, Actuators, and Microsystems, Transducers '05 2005, 2015-2018.
106. Kim Y.G., Pavuluri J.K., White J.R., Busch-Vishniac I.J., Masada G.Y. Thermocompression bonding effects on bump-pad adhesion. IEEE Trans. Component Packaging Manufact. Technol. 1995, 18:192-199.
107. Kim J., Chiao M., Lin L. Ultrasonic bonding of In/Au and Al/Al for hermetic sealing of MEMS packaging. Tech. Dig., IEEE 2002 Int. Conf. Micro Electro Mechanical Systems (MEMS 2002) 2002, 415-418.
108. Kim S.-A., Seo Y.H., Cho Y.H., Kim G., Jong U.B. Fabrication and characterization of a low-temperature hermetic MEMS package bonded by a closed-loop AuSn Solder Line. Sens. Mater. 2006, 18(4):199-213.
109. Ko W.H., Suminto J.T., Yeh G.J. Bonding techniques for microsensors. Micromachining and Micro-packaging for Transducers 1985, Vol. 20. Elsevier Science Publishers, Amsterdam, B.V., pp. 41-61.
110. Krause P., Sporys M., Obermeier E., Lange K., Grigull S. Silicon to silicon anodic bonding using evaporated glass. Int. Conf. Solid-State Sensors and Actuators. Transducers '95 1995, 228-231.
111. Lan J., Chou T.-K., Kanicki J. Electrical and optical properties of low dielectric constant planarization polymer for high-aperture-ratio a-Si:H TFT-LCDs. Proc. MRS Meet. 1997, 471:27-33.
112. Lasky J.B. Wafer bonding for silicon-on-insulator. Appl. Phys. Lett. 1986, 48:78-80.
113. Lee J.-B., English J., Ahn C.-H., Allen M.G. Planarization techniques for vertically integrated metallic MEMS on silicon foundry circuits. Micromech. J. Microeng. 1997, 7:44-54.
114. Lee T.M.H., Hsing I., Liaw C.Y.N. Improved anodic bonding process using pulsed voltage technique. J. Microelectromech. Syst. 2000, 9:469-473.
115. Lee H.S., Kim D.S., Kwon T.H. A novel low temperature bonding technique for plastic substrates using X-ray irradiation. Transducers '03 2003, 1331-2334.
116. Liang S.L. Argon concentration of RF sputtered silicon films. Chin. J. Phys. 1979, 17:102-106.
117. Lin L., Cheng Y.T., Najafi K. Formation of silicon-gold eutectic bond using localized heating method. Jpn. J. Appl. Phys. Part II 1998, 11B:1412-1414.
118. Liu Y., Cui T., Sunkam R.K., Coane P.J., Vasile M.J., Geoettert J. Novel approach to form and pattern sol-gel polymethylsilsesquioxane-based spin-on glass thin and thick films. Sens. Actuators B Chem. 2003, 88:75-79.
119. Lugscheider E., Bobzin K., Erdle A. Solder deposition for transient liquid phase (TLP)-bonding by MSIP-PVD-process. Surf. Coating Tech. 2003, 174-175:704-707.
120. Luo C., Lin L. The application of nanosecond-pulsed laser welding technology in MEMS packaging with a shadow mask. Transducers '01 Eurosensors XV 2002, 398-404.
121. Luo C, Lin L, Chiao M 2001 Nanosecond-pulsed laser bonding with a built-in mask for MEMS packaging applications. Tech. Dig., 11th IEEE Int. Conf. Solid-State Sensors and Actuators (Transducers '01), Munich, Germany June 2001.
122. Mao P., Han J. Fabrication and characterization of 20nm nanofluidic channels by glass-glass and glass-silicon bonding. Lab Chip 2005, 5:837-844.
123. Mehra A., Ayon A.A., Waitz I.A., Schmidt M.A. Microfabrication of high-temperature silicon devices using wafer bonding and deep reactive ion etching. J. Microelectromech. Syst. 1999, 8(2):152-160.
124. Mei Y., Lahiji G.R., Najafi K.A. Robust gold-silicon eutectic wafer bonding technology for vacuum packaging. Solid-State Sensor, Actuator and Microsystem Workshop 2002, 772-774.
125. Meindl J. Biomedical implantable systems. Science 1980, 210:263-267.
126. Meng E., Wang X.-Q., Mak H., Tai Y.-C. A check-valved silicone diaphragm pump. 13th Annu. Int. Conf. Micro Electro Mechanical Systems (MEMS '00) 2000, 62-67.
127. Mescheder U M, Alavi M, Hiltmann K, Lizeau C H, Nachtigall C H, Sandmaier H 2001 Local laser bonding for low temperature budget. Tech. Dig., 11th IEEE Int. Conf. Solid-State Sensors and Actuators (Transducers '01), Munich, Germany, June 2001.
128. Mitani K., Lehmann V., Stengl R., Feijoo D., Gösele U., Massoud H.Z. Causes and prevention of temperature dependent bubbles in silicon wafer bonding. Jpn. J. Appl. Phys. 1991, 30(4):615-622.
129. Mitchell J., Najafi K. Backside resistive localized heating for low temperature wafer-level bonding and packaging. Tech. Dig., Solid-State Sensor, Actuator, and Microsystems 2006, 352-355.
130. Mitchell J S, Lahiji G R, Najafi K 2005a Encapsulation of vacuum sensors on a wafer level package using a gold-silicon eutectic. Tech. Dig., IEEE Int. Conf. Solid-State Sensors, Actuators, and Microsystems, Transducers '05, Seoul, Korea, June 2005.
131. Mitchell J S, Lahiji G R, Najafi K 2000b Reliability and characterization of micro-packages in a wafer level AuSi eutectic vacuum bonding process. Proc., ASME/Pacific Rim Tech. Conf. Exhibit. Integration and Packaging of MEMS, NEMS, and Electronic Systems, InterPack05, San Francisco, CA, USA July 2005.
132. Mizuno J., Ishida H., Farrens S., Dragoi V., Shinohara H., Suzuki T., Ishizuka M., Glinsner T., Lindner F.P., Shoji S. Cyclo-olefin polymer direct bonding using low temperature plasma activation bonding. Int. Conf. Solid-State Sensors and Actuators, Transducers '05 2005, 1346-1349.
133. Morra M., Occhiello E., Marola R., Garbassi F., Humphrey P., Johnson D. On the aging of oxygen plasma-treated polydimethylsiloxane surfaces. J. Colloid Interf. Sci. 1990, 137(1):11-24.
134. Najafi K 2001-2006 Wafer bonding. Lecture notes for Introduction to MEMS, A course taught at the University of Michigan.
135. Najafi K. Micropackaging technologies for integrated microsystems: Applications to MEMS and MOEMS. Invited Plenary Talk, Proc. SPIE's Micromachining and Microfabrication Symposium 2003, 1-19.
136. Nakanishi H., Nishimoto T., Nakamura N., Nagamashi S., Arai A., Iwata Y., Mito Y. Fabrication of electrophoresis devices on quartz and glass substrates using a bonding with HF solution. MEMS '97, IEEE 1997, 299-304.
137. 2 bonding with hydrofluoric acid. Proc. MEMS-98 1998, 609-614.
138. Nese M., Hanneborg A. Anodic bonding of silicon to silicon wafers coated with aluminium, silicon oxide, polysilicon or silicon nitride. Sens. Actuators A 1993, 37-38:61-67.
139. Niklaus F., Enoksson P., Kalvesten E., Stemme G. Void-free full wafer adhesive bonding. Proc. MEMS 2000 2000, 247-252.
140. Niklaus F., Enoksson P., Kalvesten E., Stemme G. Low-temperature full wafer adhesive bonding. J. Micromech. Microeng. 2001, 11(2):100-207.
141. Noh H-S, Hesketh P J 2000 Fabrication of parylene column for micro gas chromatograph. The 7th Mechatronics Forum International Conference, Atlanta, GA, USA.
142. Noh H.-S., Choi Y., Wu C.-F., Hesketh P.J., Allen M.G. Rapid, low-cost fabrication of Parylene microchannels for microfluidic applications. 12th Int. Conf. Solid-State Sensors, Actuators, and Microsystems 2003, 798-801.
143. Noh H.-S., Moon K.-S., Cannon A., Hesketh P.J., Wong C.P. Wafer bonding using microwave of heating of parylene intermediate layers. J. Micromech. Microeng. 2004, 14:625-631.
144. Oberhammer J., Niklaus F., Stemme G. Selective wafer-level adhesive bonding with benzocyclobutene for fabrication of cavities. Sens. Actuators A Phys. 2003, 105(3):297-304.
145. Oh K.W., Han A., Bhansali-S C.H., Ahn A low-temperature bonding technique using spin-on fluorocarbon polymers to assemble microsystems. J. Micromech. Microeng. 2002, 12:187-291.
146. Owen M.J., Smith P.J. Plasma treatment of polydimethylsiloxane. Polymer Surface Modification: Relevance to Adhesion 1995, 3-15. VSP, Utrecht, The Netherlands. K.L. Mittal (Ed.).
147. Pantelidis D., Lee H.J., Bravman J.C. Effect of microstructure and chemical bonding on the adhesion strength of a silicon/polymer interface for microelectronic packaging applications. Mater. Res. Soc. Symp.-Proc. 1999, 535:165-170.
148. Park C.B., Hong S.M., Jung J.B., Kang C.S., Shin Y.E. A study on the fluxless soldering of Si-wafer/glass substrate using Sn-3.5 mass% Ag and Sn-37 mass% Pb solder. Mater. Trans. 2001, 42:820-824.
149. Philips J. Res. Spec. Issue Direct Bonding 49, 1.
150. Plaza J.A., Esteve J., Lora-Tamayo E. Effect of silicon dioxide, silicon nitride and polysilicon layers on the electrostatic pressure during anodic bonding. Sens. Actuators A 1998, 67:181-184.
151. Pomerantz D I 1968 Anodic bonding. US Pat. 3 397 278.
152. Pomerantz D I 1969 Anodic bonding to liquid metals. US Pat. 3 470 348.
153. Qingfeng X., Sasaki G., Fukunaga H. Interfacial microstructure of anodic-bonded Al/glass. J. Mater. Sci. Mater. Electron. 2002, 13:83-88.
154. Quenzer H.J., Dell C., Wagner B. Silicon-silicon anodic-bonding with intermediate glass layers using spin-on glasses. Proc. 1995 9th Annu. Int. Workshop MEMS 1996, 272-276.
155. de Reus R., Lindahl M. Si-to-Si wafer bonding using evaporated glass. Int. Conf. Solid-State Sensors, Actuators, and Microsystems, Transducers '97 1997, 661-664.
156. Rogers T. Considerations of anodic bonding for capacitive type silicon/glass sensor fabrication. J. Micromech. Microeng. 1992, 2:164-166.
157. Rogers T., Kowal J. Selection of glass, anodic bonding conditions and material compatibility for silicon-glass capacitive sensors. Sens. Actuators A Phys. 1995, 46-47:113-120.
158. Rogge B., Moser D., Oppermann H., Paul O., Baltes H. Solder-bonded micromachined capacitive pressure sensors. Proc. 1998 Conf. Micromachined Devices and Components IV 1998, 307-315.
159. Sari F, Rupf M, Gillner A, Poprawe R 2005 Advances in selective laser radiation bonding of silicon and glass for microsystems. Proc. 3rd Int. WLT-Conf. Lasers in Manufacturing 2005, Munich, Germany, June 2005.
160. Sassen S., Kupke W., Bauer K. Anodic bonding of evaporated glass structured with lift-off technology for hermetical sealing. Sens. Actuators A Phys. 2000, 83(1):150-155.
161. 2 caused by anodic bonding. J. Micromech. Microeng. 2003, 13(6):845-852.
162. Schmidt M.A. Wafer-to-wafer bonding for microstructure formation. Proc. IEEE 1998, 86:1575-1585.
163. Singh A., Horsley D.A., Cohn M.B., Pisano A.P., Howe R.T. Batch transfer of microstructures using flip-chip solder bonding. IEEE J. Microelectromech. Syst. 1999, 8:27-33.
164. Smith W.F. Foundations of Materials Science and Engineering 1993, McGraw-Hill, New York.
165. Sommadossi S., Litynska L., Zieba P., Gust W., Mittemeijer E.J. Transmission electron microscopy investigation of the microstructure and chemistry of Si/Cu/In/Cu/Si interconnections. Mater. Chem. Phys. 2003, 81:566-568.
166. Spangler L.J., Wise K.D. A technology for high-performance single-crystal silicon-on-insulator transistors. IEEE Electron Device Lett. 1987, EDL-8(4):137-139.
167. Spangler L.S., Wise K.D. A bulk silicon SOI process for active integrated sensor. Sens. Actuators A Phys. 1990, 24(2):117-122.
168. Sparks D., Queen G., Weston R., Woodward G., Putty M., Jordan L., Zarabadi S., Jayakar K. Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder. J. Micromech. Microeng. 2001, 11(6):630-634.
169. Sparks D.R., Najafi N., Massoud-Ansari S. Chip-level vacuum packaging of micromachines using nanogetters. IEEE Trans. Adv. Packaging 2003, 26:277-282.
170. TM and glass frit bonding. Reliability, Testing and Characterization of MEMS/MOEMS III, Proc. SPIE, Vol. 5343 2004, SPIE, Bellingham WA. D. Tanner, R. Ramesham (Eds.).
171. Stevenson P. Sealing pressurized capsules by laser welding. Welding Metal Fabricat 1988, 56(2):80-82.
172. Su Y.-C., Lin L. Localized plastic bonding for micro assembly, packaging and liquid encapsulation. 14th IEEE Int. Conf. Micro Electro Mechanical Systems 2001, 50-53.
173. Suga T., Otsuka K. Bump-less interconnect for next generation system packaging. IEEE, 51st Electronic Components and Technology Conf. (ECTC) 2001, 1003-1008.
174. Suga T., Miyazawa K., Yamagata Y. Direct bonding of ceramics and metals by means of a surface activation method in ultrahigh vacuum. MRS Int. Meet. Adv. Mater. Mater. Res. Soc. 1989, 8:257-262.
175. Suga T., Fujiwaka T., Sasaki G. Surface activated bonding and its application on microbonding at room temperature. 9th Eur. Hybrid Microelectron. Conf. 1993, 314-321.
176. 2. J. Electrochem. Soc. 2002, 149:G348-G351.
177. Takagi H., Kikuchi K., Maeda R., Chung T.R., Suga T. Surface activated bonding of silicon wafers at room temperature. Appl. Phys. Lett. 1996, 68:2222-2224.
178. Takagi H., Maeda R., Hosoda N., Suga T. Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation. Appl. Phys. Lett. 1999, 74:2387-2389.
179. Takahashi K., Ogura H., Sagawa M. Miniaturized millimeter-wave hybrid IC technology using non-photosensitive multi-layered BCB thin films and stud bump bonding. IEICE Trans. Electron. 2000, E83-C(11):2029-2037.
180. Taklo M.M.V., Storas P., Schjølberg-Henriksen K., Hasting H.K., Jakobsen H. Strong, high-yield and low-temperature thermocompression silicon wafer-level bonding with gold. J Micromech. Microeng. 2004, 14:884-890.
181. Tao Y., Malshe A.P., Brown W.D. Selective bonding and encapsulation for wafer-level vacuum packaging of MEMS and related micro systems. Microelectron. Reliab. 2004, 44:251-252.
182. Tatic-Lucic S., Ames J., Boardman B., McIntyre D., Jaramillo P., Starr L., Lim M. Bond-quality characterization of silicon-glass anodic bonding. Sens. Actuators A Phys. 1997, 60:223-227.
183. Thompson K., Gianchandani Y.B., Booske J., Cooper R. SiSi bonding using RF and microwave radiation. 11th Int. Conf. Solid-State Sensors and Actuators 2001, 226-229.
184. Thompson K., Gianchandani Y.B., Booske J., Cooper R.F. Direct silicon-silicon bonding by electromagnetic induction heating. J. Microelectromech. Syst. 2002, 11(4):285-292.
185. Tiensuu L., Bexwell M., Schweitz J., Smith L., Johansson S. Assembling three-dimensional microstructures using gold-silicon eutectic bonding. Sens. Actuators 1994, A45(3):227-236.
186. Tong Q.Y., Gösele U. Semiconductor Wafer Bonding: Science and Technology 1999, John Wiley & Sons Inc., New York, ISBN 0-471-57481-3.
187. Tsau H. Fabrication and Characterization of Wafer-level Gold Thermocompression Bonding 2003, MIT, Cambridge, MA.
188. Tsau H., Spearing S., Schmidt M.A. Characterization of wafer-level thermocompression bonds. IEEE J. Microelectromech. Syst. 2004, 13(6):963-971.
189. Valero L. The fundamentals of eutectic die attach. Semicond. Int. 1984, 7:236-241.
190. Wallis G. Direct-current polarization during field-assisted glass-metal sealing. J. Am. Ceram. Soc. 1970, 53:563-567.
191. Wallis G., Pomerantz D.I. Field-assisted glass-metal sealing. J. Appl. Phys. 1969, 40:3946-3949.
192. Wang C.Y., Lee C.C. A eutectic bonding technology at a temperature below the eutectic point. Proc. 42nd Electron. Components and Technology Conference 1992, 502-507.
193. Weichel S., de Reus R. Silicon-silicon wafer bonding using evaporated glass. Sens. Actuators 1998, A70(1-2):179-184.
194. Welch W.C., Najafi K. Transfer of metal MEMS packages using a wafer-level solder sacrificial layer. 18th IEEE Int. Conf. Micro Electro Mechanical Systems 2005, 584-587.
195. Welch W C III, Dokmeci M, Yazdi N, Najafi K 2005a A flux-free Pb-Sn solder bonding technology for wafer-level chip-scale vacuum packaging. Proc. ASME/Pacific Rim Tech. Conf. Exhibit. Integration and Packaging of MEMS, NEMS, and Electronic Systems, InterPack05, San Francisco, CA, USA, July 2005.
196. Welch W.C., Chae J., Najafi K. Transfer of metal MEMS packages using a wafer-level solder transfer technique. IEEE Trans. Adv. Packaging (IEEE Trans. Components Packaging Manufact. Technol. Part B Adv. Packaging) 2005, 28(4):643-649.
197. Welch W C III, Chae J, Lee S, Najafi K 2005c Transient liquid phase (TLP) bonding for MEMS packaging applications. Tech. Dig., IEEE Int. Conf. Solid-State Sensors, Actuators, and Microsystems, Transducers '05, Seoul, Korea, June 2005.
198. 2-plasma-treated silicon (100) surfaces. J. Electrochem. Soc. 2000, 147:2734-2740.
199. Wild M.J., Gillner A., Poprawe R. Advances in silicon to glass bonding with laser. Proc. SPIE-Int. Soc. Opt. Eng. 2001, 4407:135-141.
200. Witte R., Herfurth H., Heinemann S. Laser joining of glass with silicon. Proc. SPIE-Int. Soc. Opt. Eng. 2002, 4637:487-495.
201. Wolffenbuttel R.F. Low-temperature intermediate AuSi wafer bonding: eutectic or silicide bond. Sens. Actuators A Phys. 1997, 62:680-686.
202. Wolffenbuttel R.F., Wise K.D. Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature. Sens. Actuators 1994, A43(1-3):223-229.
203. Xiao Z.-X., Wu G.-Y., Zhang D., Zhang G., Li Z.-H., Hao Y.-L., Wang Y.-Y. Silicon/glass wafer-to-wafer bonding with Ti/Ni intermediate bonding. Sens. Actuators A 1998, 71:123-126.
204. Xu Y., Tai Y.-C., Huang A., Ho C.-M. IC-integrated flexible shear-stress sensor skin. J. Microelectromech. Syst. 2003, 12:740-747.
205. Yang L., Hosoda N., Suga T. Investigation on the interface microstructure of stainless steel/aluminum joints created by the surface activated bonding method. Interf. Sci. 1997, 5:279-286.
206. Yang X., Grosjean C., Tai Y.-C. Design, fabrication, and testing of micromachined silicone rubber membrane valves. J. Microelectromech. Syst. 1999, 8:393-402.
207. Yang H.A., Wu M., Fang W. Localized induction heating solder bonding for wafer level MEMS packaging. 17th IEEE Int. Conf. Microelectromechanical Systems (MEMS) 2004, 729-732.
208. Ziaie B., Arx J.A.V., Dokmeci M.R., Najafi K.A. Hermetic glass-silicon micropackage with high-density on-chip feedthroughs for sensors and actuators. IEEE/ASME J. Microelectromech. Syst. 1996, 5(3):166-179.