Nonlinear modeling of power FETs and HBTs

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 6, Issue 4, 1996, Pages 219-233

  Snowden, Christopher M ^{a,b,c,d,e,f,g,h,i,j,k,l}  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b Mullard   (United Kingdom)

^c Mullard ^*

^d UNIVERSITY OF YORK   (United Kingdom)

^e Microwave Terahertz Technol Res G

^f CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^g M ACOM Inc

^h M/A COM   (United States)

ⁱ Penton Media Inc   (United States)

^j MIT Electromagnetics Academy

^k IEEE

^l International GaAs Simulation Group

more..

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MESFET DEVICES;

LARGE SIGNAL MODELLING; NONLINEAR EQUIVALENT CIRCUIT MODELS;

MILLIMETER WAVE DEVICES;

EID: 85069085625     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

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