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Volumn 71-72, Issue , 1997, Pages 31-47

Preparation of nanocrystalline silicon quantum dot structure by a digital plasma process

Author keywords

Atomic force microscopy; Coulomb blockade; Nanocrystal; Pulsed plasma process; Quantum dot; Silicon; Single electron tunneling

Indexed keywords


EID: 85063068233     PISSN: 00018686     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0001-8686(97)90008-7     Document Type: Article
Times cited : (3)

References (17)
  • 10
    • 0027211207 scopus 로고
    • Microcrystalline semiconductors: Materials science and devices
    • P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu and Y. Aoyagi (Eds.)
    • M. Otobe and S. Oda, in P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu and Y. Aoyagi (Eds.), Microcrystalline Semiconductors: Materials Science and Devices, Mater. Res. Soc. Symp. Proc. 283 (1993) 519.
    • (1993) Mater. Res. Soc. Symp. Proc. , vol.283 , pp. 519
    • Otobe, M.1    Oda, S.2
  • 14
    • 0029493521 scopus 로고
    • Amorphous silicon technology-1995
    • M. Hack, E.A. Schiff, A. Madan, M. Powell and A. Matsuda (Eds.)
    • M. Otobe, T. Kanai and S. Oda, in M. Hack, E.A. Schiff, A. Madan, M. Powell and A. Matsuda (Eds.), Amorphous Silicon Technology-1995, Mater. Res. Soc. Symp. Proc. 377 (1995) 51.
    • (1995) Mater. Res. Soc. Symp. Proc. , vol.377 , pp. 51
    • Otobe, M.1    Kanai, T.2    Oda, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.