A high performance epitaxial SiGe-base ECL BiCMOS technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 19-22

  Harame, D L ^a   Crabbe, E F ^a   Cressler, J D ^a   Comfort, J H ^a   Sun, J Y C ^a   Stiffler, S R ^a   Kobeda, E ^a   Burghartz, J N ^a   Gilbert, M M ^a   Malinowski, J C ^a   Dally, A J ^a,b   Ratanaphanyarat, S ^a,b   Saccamango, M J ^a,b   Rausch, W ^a,b   Cotte, J ^a,b   Chu, C ^a,b   Stork, J M C ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b BM TP ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BICMOS TECHNOLOGY; BINARY ALLOYS; BISMUTH ALLOYS; COPPER ALLOYS; EMITTER COUPLED LOGIC CIRCUITS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICIDES; TITANIUM NITRIDE;

DECOUPLING CAPACITOR; KEY TECHNOLOGIES; LEVEL OF INTEGRATIONS; LOCAL INTERCONNECT; POLYSILICON EMITTER; POLYSILICON RESISTORS; SELF-ALIGNED SILICIDES; SHALLOW TRENCH ISOLATION;

SI-GE ALLOYS;

EID: 85056943935     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307299     Document Type: Conference Paper

References (8)

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8. C. Y. Wong et al, IEDM Tech. Dig., pp. 238-241, 1988.