Power electronics: General power semiconductor switch requirements

The Power Electronics Handbook: Industrial Electronics Series

Volumn , Issue , 2001, Pages 1-57-1-62

  Huang, Alex Q ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85056911617     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Chapter

References (5)

1. M. Nishihara, Power electronics diversity, presented at IPEC’90, 1990, 21–28.
2. R. Chokhawala et al., Gate drive considerations for IGBT modules, presented at IAS’92, 1992, 1186–1195.
3. B.J. Baliga, Trends in power semiconductor devices, Electron Devices IEEE Trans., 43(10) 1717–1731, 1996.
4. D.Y. Chen, G. Carpenter, and F.C. Lee, RBSOA characterization of GTO devices, in PESC’93 Record, 24th Annual IEEE 1993, 489–495.
5. H.C. Eckel et al., Optimization of the turn-off performance of IGBT at over current and short circuit current, in 5th European Conference on Power Electronics and Application Rec., 1993, 317–322.