CVD of copper from A Cu+1 precursor and water vapor and formation of TiN-encapsulated submicron copper interconnects by chemical-mechanical polishing

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 123-124

  Gelatos, A V ^a   Poon, S ^a   Marsh, R ^b   Mogab, C J ^a   Thompson, M ^a  

^a MOTOROLA INC   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION RATES; POLISHING; SILICA; SUBSTRATES; SURFACE ROUGHNESS; TIN DIOXIDE; TITANIUM NITRIDE; VLSI CIRCUITS; WATER VAPOR;

AS-DEPOSITED FILMS; CHEMICAL MECHANICAL POLISHING(CMP); COPPER INTERCONNECTS; COPPER OXIDATION; DIFFERENT SUBSTRATES; LOW SURFACE ROUGHNESS; MEASUREMENTS OF; SUBSTRATE TEMPERATURE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 85052165555     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760279     Document Type: Conference Paper

References (3)

1. Small M.B. and Pearson D.J., IBM J. Res. Develop. 34, 858 (1990).
2. Norman J.A.T. et al., J. de Physique IV, C2, 271 (1991).
3. Uttecht R.R. and Geffken R.M., VMIC, 202991.