Inorganic ARC for 0.18 μm and sub-0.18 μm multilevel metal interconnects

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 84-86

  Lee, W W ^a   He, Q ^a   Xing, G ^a   Singh, A ^a   Zielinski, E ^a   Brennan, K ^a   Dixit, G ^a   Taylor, K ^a   Liang, C S ^a   Luttmer, J D ^a   Havemann, B ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; METALS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON OXIDES; TITANIUM COMPOUNDS;

ANTI REFLECTIVE COATINGS; BACK END OF LINES; CRITICAL DIMENSION; DEEP-UV LITHOGRAPHY; DIELECTRIC CONSTANT VALUES; METAL INTERCONNECTS; SEMICONDUCTOR MANUFACTURING; SUBSTRATE REFLECTIVITY;

SILICON COMPOUNDS;

EID: 85049749302     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704758     Document Type: Conference Paper

References (2)

1. W. Lee, et al., 1997 Sym. on VLSI Tech. Digest of Tech. Papers, p131, 1997.
2. Q. He, W. Krisa, W. Lee, W. Hsu and H. Yang, SPIE, Proc. Vol. 3049, p988, 1997.